UTC-IC 2SC4027_09

UNISONIC TECHNOLOGIES CO., LTD
2SC4027
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
„
FEATURES
* High voltage and large current capacity.
* Fast switching time.
1
TO-252
Lead-free:
2SC4027L
Halogen-free:2SC4027G
„
ORDERING INFORMATION
Normal
2SC4027-x-TN3-R
Ordering Number
Lead Free
Halogen Free
2SC4027L-x-TN3-R 2SC4027G-x-TN3-R
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-252
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
1 of 5
QW-R209-018.B
2SC4027
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
RATINGS
UNIT
180
V
160
V
6
V
1.5
A
2.5
A
Ta=25°C
1
W
Collector Dissipation
Pc
TC=25°C
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
„
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
Cob
TON
TSTG
tF
TEST CONDITIONS
IC=10A, IE=0
IC =1mA, RBE=∞
IE=10μA, IC =0
IC =500mA, IB=50mA
IC =500mA, IB=50mA
VCB=120V, IE=0
VEB=4V, I IC =0
VCE=5V, IC =100mA
VCE=5V, IC =10mA
VCE=10V, IC =50mA
VCB=-10V, f=1MHz
See specified Test Circuit
MIN
180
160
6
100
80
TYP MAX UNIT
V
V
V
0.13 0.45
V
0.85 1.2
V
1.0
μA
1.0
μA
400
120
12
60
1.2
80
MHz
pF
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
R
S
T
RANGE
100~200
140~280
200~400
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QW-R209-018.B
2SC4027
„
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
INPUT
PW=20µs
D.C.≤1%
50Ω
IB1
VR
RL
14kΩ
IB2
+
100µF
-5V
OUTPUT
RB
+
470µF
100V
10IB1= -10IB2=Ic=0.7A
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2SC4027
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector to Emitter Voltage
1.2
10mA
5mA
0.8
0.6
2mA
0.4
1mA
0.2
0
A
20mA
1.0
IB=0
0
1
2
3
4
0.8
1.0mA
Ta=75°C
Ta=25°C
Ta=-25°C
0.8
0.4
0
10
0.01
0.1
1.0
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
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20
10
30
40
50
Collector to Emitter Voltage, VCE (V)
VCE=5V
100
25°C
0.01
-25°C
0.1
1.0
Collector Current, Ic (A)
Gain Bandwidth Product vs.
Collector Current
VCE=10V
100
0
Ta=75°C
10
0.2 0.4 0.6 0.8
1.2
1.0
Base to Emitter Voltage, VBE (V)
0
0.5mA
IB=0
DC Current vs. Collector Current
DC Current Gain, hFE
1.2
2.0mA
1.5mA
0.2
1000
100
Output Capacitance, Cob (pF)
Collector Current, Ic (A)
1.6
3.0mA
2.5mA
0.4
Collector to Emitter Voltage, VCE (V)
Collector Current vs.
Base to Emitter Voltage
VCE=5V
3.5mA
0.6
0
5
0m
40mA 50mA
m
30 A
1.4
Collector Current, Ic (A)
Collector Current, Ic (A)
1.6
1.0
Collector Current vs.
Collector to Emitter Voltage
4.5mA
4.0mA
5.
1.8
Gain Bandwidth Product, fT (MHz)
„
NPN SILICON TRANSISTOR
Output Capacitance vs.
Collector to Base Voltage
f=1MHz
10
1.0
10
100
Collector to Base Voltage, VCB (V)
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TYPICAL CHARACTERISTICS(Cont.)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter
Saturation Voltage, VCE(SAT) (V)
1000
Ta=75°C
Ta=25°C
Ta=-25°C
100
Collector Current vs.
Collector to Emitter Voltage
ICP=2.5A
1m
s
IC=1.5A
s
0m
10
ms
10
C
D
1.0
op
er
a
(T
=2
)
C
(T
a=
25
°C
)
5°
op
er
ati
on
n
io
0.1
at
DC
One pulse
Tc =25°C
1.0
10
100
Collector to Emitter Voltage, VCE(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
Ic/IB=10
1.0 Ta=-25°C 25°C
75°C
0.1
1.0
Collector Current, Ic (A)
0.01
0.01
10
0.01
0.1
1.0
Collector Current, Ic (A)
Collector Dissipation vs.
Ambient Temperature
16
Collector Dissipation, Pc (W)
Collector to Emitter Saturation
Voltage, VCE(SAT) (V)
Ic/IB=10
Collector Current, Ic (A)
„
NPN SILICON TRANSISTOR
14
12
10
8
6
4
No heat sink
2
0
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta(°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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