UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO -92 S P 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temerature Storage Temprature SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg 15 10 7 5 9 1 0.55 150 -55 ~ +150 V V V A A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-ON Time Storage Time Fall Time UTC SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO IEBO HFE1 HFE2 VCE (sat)1 VCE (sat)2 VBE (sat) fT Cob ton tstg tf TEST CONDITIONS Ic=10μA,IE=0 Ic-1mA,RBE=∞ IE=10μA,Ic=0 VCB=10V,IE=0 VEB=4V,Ic=0 VCE=2V,Ic=500mA VCE=2V,Ic=3A Ic=1.5A,IB=30mA Ic=3A,IB=60mA Ic=1.5A,IB=30mA VCE=2V,Ic=500mA VCB=10V,f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit MIN TYP MAX UNIT 15 10 7 0.1 0.1 1200 450 200 120 230 0.85 350 23 30 210 11 180 350 1.2 V V V μA μA mV mV V MHz pF ns UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R216-005,A UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT IB1 PW=20μs D.C.≦1% OUTPUT IB2 INPUT RB 50Ω RL VR + 220μF + 470μF Vcc=5V VBE= - 5V 20IB1= -20IB2=Ic=1.5A ELECTRICAL CHARACTERISTICS CURVES IC - VCE A 20m 15mA A 10m mA 40 3 5mA 4mA 3mA 2 2mA 1 1mA IB=0 0 0 0.2 0.4 0.6 0.8 4 5mA 3 DC Current Gain, hFE -25℃ 25℃ Ta=75℃ Collector Current, Ic (A) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector - to - Emitter Voltage, VCE (V) UTC 1mA IB=0 0 1 2 3 4 5 Collector - to - Emitter Voltage, VCE (V) 4 1 2mA 1 0 IC - VBE 2 4mA 2 1.0 VCE=2V 3 8mA 6mA Collector - to - Emitter Voltage,VCE (V) 5 10mA A m 15 A 20m 25mA A 5m Collector Current, Ic (A) 60m A Collector Current, Ic (A) 2 4 IC - VCE 5 5 hFE - Ic 10000 7 5 3 2 VCE=2V Ta=75℃ 1000 7 5 3 2 -25℃ 25℃ 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R216-005,A 1.0 7 5 3 2 VCE(sat) - Ic Ic/IB=20 Collector - Emitter Saturation Voltage,VCE(sat) (V) Collector - Emitter Saturation Voltage, VCE(sat) (V) UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR 0.1 7 5 3 2 0.01 7 5 3 2 Output Capacitance, Cob (pF) Collector - Emitter Saturation Voltage,VCE(sat) (V) Ic/IB=50 2 25℃ 1.0 Ta=-25℃ 7 5 75℃ 3 2 7 5 3 2 10 1.0 5 S n tio /B it m Li Collector Current, Ic (A) 500 μs s Ic=5A s 1.0 7 5 3 2 <100 μs 1m 5 3 a er op 2 10 7 5 3 2 Icp=9A m 10 5 3 2 C D 7 7 10 5 s 0m it 10 m Li n tio pa si 100 3 ASO 2 VCE=2V 2 2 Collector - to - Emitter Voltage, VCB (V) fT - Ic 3 UTC f=1MHz is D Gain - Bandwidth Product,f T (MHz) 0.1 0.01 2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10 Collector Current, Ic (A) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, Ic (A) Cob - VCB 100 3 10 0.01 0.01 7 5 3 2 VCE(sat) - Ic 7 5 1000 7 5 Ic/IB=50 0.001 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 710 Collector Current, Ic (A) 0.001 0.01 2 3 5 7 0.1 2 3 5 71.0 2 3 5 710 Collector Current, Ic (A) 10 VCE(sat) - Ic 1.0 7 5 3 2 0.1 7 5 3 2 0.1 7 5 3 2 Ta=25⊥ Single pulse 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R216-005,A UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR Pc - Ta 0.8 Collector Dissipation, Pc (W) 0.7 0.6 0.55 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature,Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R216-005,A