UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS 1 * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES SOT-89 *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. *Pb-free plating product number: 2SA2016L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA2016-AB3-R 2SA2016L-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel 2SA2016L-AB3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AB3: SOT-89 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°С) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Dissipation Mounted on a ceramic board Pc 1.3 W 2 (250mm *0.8mm) Collector Dissipation (Tc=25°C) Pc 3.5 W Collector Current Ic -7 A Collector Current Icp -10 A Base Current IB -1.2 A Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc=25℃) PARAMETER Collector-to-Base Breakdown Voltage Collector-to- Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time VBE(SAT) fT Cob tON tSTG tF TEST CONDITIONS Ic= -10µA, IE=0 Ic= -1mA, RBE=∞ Ic=0, IE= -10µA VCB= -40V, IE=0 VEB= -4V, Ic=0 VCE= -2V, Ic= -500mA Ic= -3.5A, IB= -175mA Ic= -2A, IB= -40mA Ic= -2A, IB= -40mA VCE= -10V, Ic= -500mA VCB= -10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -50 -50 -6 200 TYP MAX UNIT V V V -0.1 µA -0.1 µA 560 -0.23 -0.39 V -0.24 -0.40 V -0.83 -1.2 V 290 MHz 50 pF 40 ns 225 ns 25 ns 2 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR SWITCHING TIME TEST CIRCUIT PW=20μs D.C.≒1% IB2 IB1 INPUT 50Ω VR RB + OUTPUT + RL 100μF 470μF VBE =5V VCC= -25V -20IB1=20IB2=IC= 2.5A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS VBE(SAT) -Ic VCE(SAT )-Ic -10000 7 5 Ta =75℃ Ta =25℃ -1000 7 5 3 2 Ta =-25℃ -100 7 5 3 2 -10 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Base-to-Emitter Saturation Voltage,VBE(SAT) -V Collector-to-Emitter Saturation Voltage,VCE (SAT) -mV -10000 7 IC/IB =50 5 3 2 IC/IB =50 3 2 Ta =-25℃ -1000 7 5 Ta =75℃ 3 2 -100 -0.01 2 3 5 7 -10 Ta =25℃ 2 2 3 5 7 -1.0 3 5 7 -0.1 fT -Ic Cob-VCB 1000 5 3 f=1MHz Gain-Bandwidth Product,fT-MHz 2 Output Capacitance,Cob-pF VCE= -10V 7 5 100 7 5 3 2 10 7 5 3 2 5 7-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 3 2 100 7 5 3 2 10 5 7-0.01 2 3 5 7 -0.1 2 3 5 2 3 5 7 -10 Pc -Ta ASO 2.0 Icp = -10A 0μ 10 s μ 50 DC Op er at io s IC= -7A n 100ms 10ms 3 2 Tc = 25℃ -0.01 2 3 5 7 -10 2 3 5 7 -100 -0.1 2 3 5 7 -1.0 Collector-to-Emitter Voltage,VCE-V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Dissipation,Pc -W s 1m Collector Current,Ic -A 2 3 5 7 -1.0 Collector Current,Ic -A Collector-to-Base Voltage,VCB-V 2 -10 7 5 3 2 -1.0 7 5 3 2 -0.1 7 5 2 3 5 7 -10 Collector Current,Ic -A Collector Current,Ic -A 1.5 Mo un ted 1.3 on a 1.0 0.5 ce ram ic bo ard (2 50 mm 2 * 0. 8m m) 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -℃ 4 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Ic-VCE Collector Current Ic -A -6 -5 -90mA -40mA -30mA -3 -20mA -2 -10mA -1 -0.8 -1.2 -1.6 -6 -5 -4 -3 -2 Ta =75℃ -1 IB =0 -0.4 VCE = -2V -7 -4 -100mA 0 0 Ic-VBE -8 -50mA -60mA -70mA -80mA Collector Current ,Ic -A -7 Ta =-25℃ 0 -2.0 0 -0.2 Collector -to-Emitter Voltage,VCE-V hFE -Ic -1000 7 IC/IB=20 5 3 2 VCE= -2V Ta =75℃ 3 2 Ta =25℃ 100 7 5 Collector-to-Emitter Saturation Voltage, VCE(SAT) -mV DC Current Gain, hFE 1000 7 5 -100 7 5 3 2 Ta =-25℃ 3 2 10 -0.01 2 3 5 7-0.1 2 3 5 7 -1.0 Collector Current,Ic -A 2 3 5 7 -10 Ta =25℃ -0.4 -0.6 -0.8 -1.0 -1.2 Base-to-Emitter Voltage,VBE-V -1.4 VCE(SAT) -Ic Ta =75℃ Ta =25℃ Ta =-25℃ -10 7 5 3 2 -1.0 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current,Ic -A 2 3 5 7 -10 Pc -Tc 4.0 Collector Dissipation,Pc -W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc-℃ 140 160 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R208-018.B