SavantIC Semiconductor Product Specification 2SD5071 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal output application PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 1 SavantIC Semiconductor Product Specification 2SD5071 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER MAX UNIT VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=2.5 A;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V VF Diode forward voltage IF=3.5A 2.0 V Fall time IC=3A;RL=66.7>;VCC=200V IB1=0.8A;IB2=-1.6A 0.4 µs tf CONDITIONS 2 MIN TYP. 3 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD5071