SavantIC Semiconductor Product Specification 2SD2125 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 1500 VCEO Collector-emitter voltage Open base 600 VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2125 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IE=200mA , IC=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A VBEsat Base-emitter saturation voltage ICBO MIN TYP. MAX 5 UNIT V 5.0 V IC=5A ;IB=1A 1.5 V Collector cut-off current VCB=500V; IE=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 5 Transition frequency IC=0.1A ; VCE=10V COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz VF Diode forward voltage IF=6A 2.0 V Fall time ICP=5A ;IBL=1A;VCC=100V 0.5 µs fT tf 2 3.0 20 3 MHz 165 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD2125