SavantIC Semiconductor Product Specification 2SD1555 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 5 A 2.5 A 50 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1555 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IE=0.2A , IC=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A VBEsat Base-emitter saturation voltage ICBO hFE MIN TYP. MAX 5 UNIT V 5.0 V IC=4A; IB=0.8A 1.5 V Collector cut-off current VCB=500V; IE=0 10 µA DC current gain IC=1A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz VF Diode forward voltage IF=5A Fall time ICP=4A ;IB1(end)=0.8A fT tf 2 3.0 8 3 MHz 165 pF 0.5 2.0 V 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1555