SAVANTIC 2SD1555

SavantIC Semiconductor
Product Specification
2SD1555
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
2.5
A
50
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1555
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
Emitter-base breakdown voltage
IE=0.2A , IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
ICBO
hFE
MIN
TYP.
MAX
5
UNIT
V
5.0
V
IC=4A; IB=0.8A
1.5
V
Collector cut-off current
VCB=500V; IE=0
10
µA
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
IF=5A
Fall time
ICP=4A ;IB1(end)=0.8A
fT
tf
2
3.0
8
3
MHz
165
pF
0.5
2.0
V
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SD1555