ISC 2SD1049

Inchange Semiconductor
Product Specification
2SD1049
Silicon NPN Power Transistors
·
DESCRIPTION
・With TO-3PN package
・High current,
・High speed switching
・High reliability
APPLICATIONS
・Switching regulators
・Motor controls
・High frequency inverters
・General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
25
A
IB
Base current
5
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.55
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SD1049
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.1mA ;IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=0.1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=25A; IB=2.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=25A ;IB=2.5A
2.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=25A ; VCE=5V
1.0
μs
2.5
μs
0.4
μs
20
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=25A IB1=-IB2=2.5A
RL=3Ω;PW=20μs;
Duty≤2%
Fall time
2
Inchange Semiconductor
Product Specification
2SD1049
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3