SavantIC Semiconductor Product Specification 2SC2625 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.55 /W SavantIC Semiconductor Product Specification 2SC2625 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V VCEO(SUS) Collector-emitter sustaining voltage IC=1A ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.2 V VBEsat Emitter-base saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=450V IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=4A ; VCE=5V 1.0 µs 2.0 µs 1.0 µs 10 Switching times ton Turn-on time ts Storage time tf Fall time IC=7.5A; IB1=-IB2=1.5A RL=20B,Pw=20µs DutyC2% 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC2625 SavantIC Semiconductor Product Specification 2SC2625 Silicon NPN Power Transistors 4