ISC 2SC3317

Inchange Semiconductor
Product Specification
2SC3317
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage,high speed switching
・High reliability
APPLICATIONS
・Switching regulators
・Ultrasonic generators
・High frequency inverters
・General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
G
N
A
H
PARAMETER
D
N
O
IC
R
O
T
UC
VALUE
UNIT
Open emitter
500
V
Collector-emitter voltage
Open base
400
V
Emitter-base voltage
Open collector
7
V
Collector-base voltage
INC
CONDITIONS
IC
Collector current
5
A
IB
Base current
2
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.13
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SC3317
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
400
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IB=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
体
导
半
固电
DC current gain
Switching times
ton
tstg
tf
CONDITIONS
IN
Storage time
IC=2.5AIB1=0.5A;
IB2=-1A;RL=60Ω
Pw=20μs ;Duty≤2%
Fall time
2
TYP.
10
MAX
UNIT
V
TOR
C
U
D
ON
C
I
M
E SE
G
N
A
CH
Turn-on time
IC=2A ; VCE=5V
MIN
1
mA
0.50
μs
1.50
μs
0.15
μs
Inchange Semiconductor
Product Specification
2SC3317
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC3317
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC