Inchange Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER D N O IC R O T UC VALUE UNIT Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V Collector-base voltage INC CONDITIONS IC Collector current 5 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.13 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 400 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 hFE 体 导 半 固电 DC current gain Switching times ton tstg tf CONDITIONS IN Storage time IC=2.5AIB1=0.5A; IB2=-1A;RL=60Ω Pw=20μs ;Duty≤2% Fall time 2 TYP. 10 MAX UNIT V TOR C U D ON C I M E SE G N A CH Turn-on time IC=2A ; VCE=5V MIN 1 mA 0.50 μs 1.50 μs 0.15 μs Inchange Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC