3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 3000 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AB (SMC) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VWM 10 V to 43 V PPPM 3000 W PD 6.0 W Case: DO-214AB (SMC) IFSM 200 A TJ max. 185 °C Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant and AEC-Q101 qualified MECHANICAL DATA Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs Peak power pulse current with a 10/1000 μs waveform (1) waveform (1) (fig. Peak forward surge current 8.3 ms single half sine-wave (2) SYMBOL VALUE UNIT (fig. 3) PPPM 3000 W 1) IPPM See next table A IFSM 200 A Power dissipation on infinite heatsink, TL = 75 °C (fig. 6) PD 6.0 W Maximum instantaneous forward voltage at 100 A (2) VF 3.5 V Operating junction and storage temperature range TJ, TSTG - 65 to + 185 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. A (2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 29-Jul-11 Document Number: 88480 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. STAND-OFF TEST CURRENT VOLTAGE VWM IT (mA) (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) TJ = 150 °C MAXIMUM MAXIMUM PEAK PULSE CLAMPING SURGE VOLTAGE AT CURRENT IPPM IPPM (A) (2) VC (V) 3KASMC10 3AW 11.1 13.6 1.0 10 5.0 50 160 18.8 3KASMC10A 3AX 11.1 12.3 1.0 10 5.0 50 177 17.0 3KASMC11 3AY 12.2 14.9 1.0 11 5.0 50 149 20.1 3KASMC11A 3AZ 12.2 13.5 1.0 11 5.0 50 165 18.2 3KASMC12 3BD 13.3 16.3 1.0 12 2.0 20 136 22.0 3KASMC12A 3BE 13.3 14.7 1.0 12 2.0 20 151 19.9 3KASMC13 3BF 14.4 17.6 1.0 13 2.0 20 126 23.8 3KASMC13A 3BG 14.4 15.9 1.0 13 2.0 20 140 21.5 3KASMC14 3BH 15.6 19.1 1.0 14 1.0 10 116 25.8 3KASMC14A 3BK 15.6 17.2 1.0 14 1.0 10 129 23.2 3KASMC15 3BL 16.7 20.4 1.0 15 1.0 10 112 26.9 3KASMC15A 3BM 16.7 18.5 1.0 15 1.0 10 123 24.4 3KASMC16 3BN 17.8 21.8 1.0 16 1.0 10 104 28.8 3KASMC16A 3BP 17.8 19.7 1.0 16 1.0 10 115 26.0 3KASMC17 3BQ 18.9 23.1 1.0 17 1.0 10 98.4 30.5 3KASMC17A 3BR 18.9 20.9 1.0 17 1.0 10 109 27.6 3KASMC18 3BS 20.0 24.4 1.0 18 1.0 10 93.2 32.2 3KASMC18A 3BT 20.0 22.1 1.0 18 1.0 10 103 29.2 3KASMC20 3BU 22.2 27.1 1.0 20 1.0 10 83.8 35.8 3KASMC20A 3BV 22.2 24.5 1.0 20 1.0 10 92.6 32.4 3KASMC22 3BW 24.4 29.8 1.0 22 1.0 10 76.1 39.4 3KASMC22A 3BX 24.4 26.9 1.0 22 1.0 10 84.5 35.5 3KASMC24 3BY 26.7 32.6 1.0 24 1.0 10 69.8 43.0 3KASMC24A 3BZ 26.7 29.5 1.0 24 1.0 10 77.1 38.9 3KASMC26 3CD 28.9 35.3 1.0 26 1.0 10 64.4 46.6 3KASMC26A 3CE 28.9 31.9 1.0 26 1.0 10 71.3 42.1 3KASMC28 3CF 31.1 38.0 1.0 28 1.0 10 60.0 50.0 3KASMC28A 3CG 31.1 34.4 1.0 28 1.0 10 66.1 45.4 3KASMC30 3CH 33.3 40.7 1.0 30 1.0 15 56.1 53.5 3KASMC30A 3CK 33.3 36.8 1.0 30 1.0 15 62.0 48.4 3KASMC33 3CL 36.7 44.9 1.0 33 1.0 15 50.8 59.0 3KASMC33A 3CM 36.7 40.6 1.0 33 1.0 15 56.3 53.3 3KASMC36 3CN 40.0 48.9 1.0 36 1.0 20 46.7 64.3 3KASMC36A 3CP 40.0 44.2 1.0 36 1.0 20 51.6 58.1 3KASMC40 3CQ 44.4 54.3 1.0 40 1.0 20 42.0 71.4 3KASMC40A 3CR 44.4 49.1 1.0 40 1.0 20 46.5 64.5 3KASMC43 3CS 47.8 58.4 1.0 43 1.0 20 39.1 76.7 3KASMC43A 3CT 47.8 52.8 1.0 43 1.0 20 43.2 69.4 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Revision: 29-Jul-11 Document Number: 88480 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient air (1) Typical thermal resistance, junction to leads SYMBOL VALUE UNIT RJA RJL 77.5 18.3 °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 0.211 57T 9AT 850 3500 7" diameter plastic tape and reel 13" diameter plastic tape and reel 3KASMC10AHE3/57T (1) 3KASMC10AHE3/9AT (1) Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Power (kW) 100 10 1 Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1 10 100 1000 0 10 000 1.0 2.0 3.0 td - Pulse Width (µs) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 4.0 10 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 0.1 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs 75 50 25 Measured at Zero Bias 1000 Measured at Stand-Off Voltage TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 0 0 50 100 150 200 10 20 30 40 TJ - Initial Temperature (°C) VWM - Reverse Stand-off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Revision: 29-Jul-11 50 Document Number: 88480 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor 6 TJ = TJ max. 8.3 ms Single Half Sine-Wave PD - Power Dissipation (W) Peak Forward Surge Current (A) 200 100 50 10 60 Hz Resistive or Inductive Load 5 4 3 2 1 0 1 5 10 50 100 0 25 Number of Cycles at 60 Hz 50 75 100 125 150 175 200 TL - Lead Temperature (°C) Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current Fig. 6 - Power Derating Curve PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 29-Jul-11 Document Number: 88480 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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