VISHAY SM8S36A

New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
PPPM (10 x 1000 μs)
6600 W
PPPM (10 x 10 000 μs)
5200 W
PD
8W
IFSM
700 A
TJ max.
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
VALUE
UNIT
6600
with 10/1000 μs waveform
PPPM
PD
W
5200
8.0
W
See next table
A
IFSM
700
A
TJ, TSTG
- 55 to + 175
°C
IPPM
(1)
Note
(1) Non-repetitive current pulse derated above T = 25 °C
A
Document Number: 88387
Revision: 20-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR (V)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
MAXIMUM
MAX. PEAK
PULSE CURRENT CLAMPING
VOLTAGE
AT 10/1000 μs
AT IPPM
WAVEFORM
(A)
VC (V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
SM8S10
11.1
13.6
5.0
10.0
15
250
351
18.8
SM8S10A
11.1
12.3
5.0
10.0
15
250
388
17.0
SM8S11
12.2
14.9
5.0
11.0
10
150
328
20.1
SM8S11A
12.2
13.5
5.0
11.0
10
150
363
18.2
SM8S12
13.3
16.3
5.0
12.0
10
150
300
22.0
SM8S12A
13.3
14.7
5.0
12.0
10
150
332
19.9
SM8S13
14.4
17.6
5.0
13.0
10
150
277
23.8
SM8S13A
14.4
15.9
5.0
13.0
10
150
307
21.5
SM8S14
15.6
19.1
5.0
14.0
10
150
256
25.8
SM8S14A
15.6
17.2
5.0
14.0
10
150
284
23.2
SM8S15
16.7
20.4
5.0
15.0
10
150
245
26.9
SM8S15A
16.7
18.5
5.0
15.0
10
150
270
24.4
SM8S16
17.8
21.8
5.0
16.0
10
150
229
28.8
SM8S16A
17.8
19.7
5.0
16.0
10
150
254
26.0
SM8S17
18.9
23.1
5.0
17.0
10
150
216
30.5
SM8S17A
18.9
20.9
5.0
17.0
10
150
239
27.6
SM8S18
20.0
24.4
5.0
18.0
10
150
205
32.2
SM8S18A
20.0
22.1
5.0
18.0
10
150
226
29.2
SM8S20
22.2
27.1
5.0
20.0
10
150
184
35.8
SM8S20A
22.2
24.5
5.0
20.0
10
150
204
32.4
SM8S22
24.4
29.8
5.0
22.0
10
150
168
39.4
SM8S22A
24.4
26.9
5.0
22.0
10
150
186
35.5
SM8S24
26.7
32.6
5.0
24.0
10
150
153
43.0
SM8S24A
26.7
29.5
5.0
24.0
10
150
170
38.9
SM8S26
28.9
35.3
5.0
26.0
10
150
142
46.6
SM8S26A
28.9
31.9
5.0
26.0
10
150
157
42.1
SM8S28
31.1
38.0
5.0
28.0
10
150
132
50.1
SM8S28A
31.1
34.4
5.0
28.0
10
150
145
45.4
SM8S30
33.3
40.7
5.0
30.0
10
150
123
53.5
SM8S30A
33.3
36.8
5.0
30.0
10
150
136
48.4
SM8S33
36.7
44.9
5.0
33.0
10
150
112
59.0
SM8S33A
36.7
40.6
5.0
33.0
10
150
124
53.3
SM8S36
40.0
48.9
5.0
36.0
10
150
103
64.3
SM8S36A
40.0
44.2
5.0
36.0
10
150
114
58.1
DEVICE
TYPE
SM8S40
44.4
54.3
5.0
40
10
150
92.4
71.4
SM8S40A
44.4
49.1
5.0
40
10
150
102
64.5
SM8S43
47.8
58.4
5.0
43
10
150
86
76.7
SM8S43A
47.8
52.8
5.0
43
10
150
95.1
69.4
Note
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
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For technical questions within your region, please contact one of the following:
Document Number: 88387
[email protected], [email protected], [email protected]
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RJC
0.90
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
SM8S10AHE3/2D (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
2.605
2D
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
Input Peak Pulse Current (%)
Power Dissipation (W)
8.0
6.0
4.0
2.0
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td
0
0
50
0
150
100
10
20
30
t - Time (ms)
Fig. 1 - Power Derating Curve
Fig. 3 - Pulse Waveform
40
10 000
6000
Reverse Surge Power (W)
5000
Load Dump Power (W)
0
200
Case Temperature (°C)
4000
3000
2000
1000
1000
0
25
50
75
100
125
150
175
100
10
Case Temperature (°C)
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 4 - Reverse Power Capability
Document Number: 88387
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
207
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
100 000
CJ - Junction Capacitance (pF)
Transient Thermal Impedance (°C/W)
100
RθJA
10
RθJC
1
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Zero Bias
10 000
Measured at Stand-Off
Voltage VWM
1000
0.01
0.01
0.1
1
10
10
100
15
20
25
30
35
40
t - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
45
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
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0.091 (2.3)
0.067 (1.7)
0.028 (0.7)
0.020 (0.5)
0.098 (2.5)
0.059 (1.5)
For technical questions within your region, please contact one of the following:
Document Number: 88387
[email protected], [email protected], [email protected]
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
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