TIGER ELECTRONIC CO.,LTD TO-92L Plastic-Encapsulate Transistors 2SC2236 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 0.9 W ℃ 150 -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 1mA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , 30 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V IB=0 Min Typ Max Unit Collector cut-off current ICBO VCB=30V , IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 µA DC current gain hFE VCE=2 V, Collector-emitter saturation voltage VCE(sat) IC= 500mA 2 V 1 V VBE IC= 500 mA, VCE= 2V Transition frequency fT VCE= 2V, IC= 500mA Cob 320 IC= 1.5 A, IB= 0.03A Base-emitter voltage Collector output Capacitance 100 120 VCB= 10V, IE= 0,f=1MHz MHz 30 pF CLASSIFICATION OF hFE Rank Range O Y 100-200 160-320 A,Jun,2011