TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTA1271 TRANSISTOR (PNP) 1.EMITTER FEATURES z High DC Current Gain z Complementary to KTC3203 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V -0.8 A 0.625 W 200 ℃/W IC Collector Current PC Collector Power Dissipation RθJA Thermal Resistance From Junction To Ambient Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA ,IE=0 -35 V Collector-emitter breakdown voltage V(BR) CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-25V,IB=0 -0.2 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-700mA 35 DC current gain 320 IC=-500mA,IB=-20mA -0.7 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -0.8 V Transition frequency fT VCE=-5V,IC=-10mA 120 MHz VCB=-10V, IE=0, f=1MHz 19 pF Collector-emitter saturation voltage Collector Output Capacitance VCE(sat) Cob CLASSIFICATION OF hFE(1) RANK RANGE O 100-200 Y 160-320 A,Dec,2010