TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES General Purpose Application Switching Application 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit V VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. BASE ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-BASE breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 70 hFE(2) VCE= 6V, IC= 400mA 25 VCE(sat) IC=100mA, IB= 10mA 0.25 V VBE VCE=1V, IC= 100mA 1.0 V fT VCE= 6V, IC= 20mA 300 MHz VCB= 6V, IE= 0,f=1 MHz 7.0 pF 400 DC current gain Collector-emitter saturation voltage Base-Emitter Saturation Voltage Transition frequency Collector Output Capacitance Cob CLASSIFICATION OF hFE O Y Range hFE(1) 70-140 120-240 Range hFE(2) 25 40 Rank GR A,June,2011