TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR (PNP) TO-92 FEATURES z Excellent hFE Linearity z Low Noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.15 A PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =-100μA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-6V, IC=-2mA 70 hFE(2) VCE=-6V, IC=-150mA 25 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.1 V fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF Rank Range VCE=-10V, IC=-1mA 80 MHz VCB=-10V, IE=0, f=1MHz VCE=-6V, Ic=-0.1mA, f=1KHZ, Rg=10KΩ 7 pF 10 dB hFE(1) O Y GR 70-140 120-240 200-400 Marking A,June,2011