Inchange Semiconductor Product Specification 2SD1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Wide ASO(safe operating area) ・Complement to type 2SB825 APPLICATIONS ・Universal high current switching as solenoid driving, ・High speed inverter and converter. relay drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICP Collector current-peak 12 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1061 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=4A, IB=0.4A 0.4 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=5A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.2 μs 0.9 μs 0.3 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=2A IB1=- IB2=0.2A VCC=20V;RL=10Ω hFE-1 classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1061 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1061 Silicon NPN Power Transistors 4