Inchange Semiconductor Product Specification 2SD1669 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1136 ・Low collector saturation voltage ・Wide safe operating area APPLICATIONS ・For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A ICM Collector current-peak 15 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1669 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=6A ;IB=0.6A 0.4 V ICBO Collector cut-off current VCB=40V ;IE=0 100 μA IEBO Emitter cut-off current VEB=4V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=5A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.10 μs 1.20 μs 0.05 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A;IB1=-IB2=0.2A VCC=20V;RL=4Ω hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1669 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3