Inchange Semiconductor Product Specification 2SD1238L Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SB922L APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other largecurrent switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current-peak 20 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1238L Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=6A; IB=0.6A 0.4 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=6A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 20 MHz 0.2 μs 1.7 μs 0.2 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;IB1=-IB2=-0.5A VCC=50V;RL=10Ω hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1238L Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SD1238L Silicon NPN Power Transistors 4