Inchange Semiconductor Product Specification 2SD1064 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SB828 ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Relay drivers, ·High-speed inverters, ·Converters, ·General high-current switching applications . PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICM Collector current -peak 17 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1064 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=6A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=5A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 10 MHz 0.1 μs 0.05 μs 1.2 μs Switching times ton Turn-on time tstg Storage time tf IC=5.0A; IB1=-IB2=0.5A VCC=20V;RL=4Ω Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 Inchange Semiconductor Product Specification 2SD1064 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SD1064 Silicon NPN Power Transistors 4