A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Description Features The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET’s Gate pin. • • Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors’ output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays. • • Application • • • Mechanical Data • • Flyback Converters in: • Adaptors • LCD Monitors • Server PSU’s • Set Top Boxes LLC Converter in: • High Power Adaptors • LCD TV • Street Lighting Turn-off propagation delay 15ns and turn-off time 20ns. Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous Mode (CCM) operation Compliant with Energy Star V2.0 and European Code of Conduct V3 Halogen Free part 5-15V Vcc range Case: SO-8 Marking Information: See Page 13 Refer to documents: AN54, AN69, DN90, DN91 and DN94 available from the website Ordering Information Product ZXGD3101N8TC Status Active ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 Package SO-8 Marking ZXGD3101 Reel size (inches) 13 1 of 14 www.diodes.com Tape width (mm) 12 Quantity per reel 2500 June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Maximum Ratings Parameter Symbol Limit Unit Supply voltage (Note 1) VCC 15 V Continuous Drain pin voltage (Note 1) VD -3 to180 V GATEH and GATEL output Voltage (Note 1) VG -3 to VCC + 3 V ISOURCE 4 A Driver peak sink current ISINK 7 A Reference current IREF 25 mA Bias voltage VBIAS VCC V Bias current IBIAS 100 mA Power dissipation at TA =25°C PD 490 mW Operating junction temperature TJ -40 to +150 °C TSTG -50 to +150 °C Symbol Value Unit Junction to ambient (Note 2) RθJA 255 °C/W Junction to lead (Note 3) RθlA 120 °C/W Driver peak source current Storage temperature Thermal Characteristics Parameter ESD Rating Model Rating Unit Human Body 4000 V Machine 400 V Notes: 1.All voltages are relative to GND pin 2. Mounted on minimum 1oz weight copper on FR4 PCB in still air conditions. 3. Output Drivers - Junction to solder point at end of the lead 5 and 6 ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 2 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Electrical Characteristics @TA = 25°C, VCC= 10V, Parameter RBIAS=1.8kΩ, RREF=3kΩ Symbol Conditions Min. Typ. Max. VDRAIN ≤ -200m V - 3 - VDRAIN ≥ 0V - 8 - -45 -16 0 - 0.6 1 VDRAIN = -60mV, (Note 6) 5.0 7.5 - VDRAIN = -80mV, (Note 6) 7.0 8.5 - VDRAIN = -100mV, (Note 6) 8.4 9 - VDRAIN ≤ -140mV, (Note 6) 9.2 9.4 - VDRAIN ≤ -200mV, (Note 6) 9.3 9.5 - Unit Input and supply characteristics Operating current IOP mA Gate Driver Turn-off Threshold Voltage(Note 4) VT VG(off) VG = 1V, (Note 5) VDRAIN ≥ 0V, (Note 5) mV GATE output voltage (Note 4) VG GATEH peak source current GATEL peak sink current ISOURCE VGH = 1V 2.5 - A ISINK VGL = 5V 2.5 - A Turn on Propagation delay td1 Turn off Propagation delay td2 Gate rise time Gate fall time Notes: V 525 ns 15 ns tr 305 ns tf 20 ns CL = 2.2nF, (Notes 6 and 7) 4. GATEH connected to GATEL 5. RH = 100kΩ, RL = O/C 6. RL = 100kΩ, RH = O/C 7. Refer to Fig 6: test circuit and Fig 7: timing diagram on Page 12 ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 3 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Schematic Symbol and Pin Out Details Vcc + Differential - amplifier DRAIN + High volt - comparator Gate drive amplitude control Turn-on/off control GATEH Driver GATEL Threshold voltage control REF BIAS GND Pin No. Symbol 1 NC 2 REF 3 GATEL 4 GATEH 5 VCC 6 GND 7 BIAS 8 DRAIN Notes: Description and function No connection This pin can be connected to GND Reference This pin is connected to VCC via resistor, RREF. RREF should be selected to source approximately 3mA into this pin. (Note 8) Gate turn off This pin sinks current, ISINK, from the synchronous MOSFET Gate. Gate turn on This pin sources current, ISOURCE, to the synchronous MOSFET Gate. Power Supply This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor. Ground This is the ground reference point. Connect to the synchronous MOSFET Source terminal. Bias This pin is connected to VCC via resistor, RBIAS. RBIAS should be selected to source 1.6 times IREF into this pin. (Note 9) Drain connection This pin connects directly to the synchronous MOSFET Drain terminal. 8. REF pin should be assumed to be at GND +0.7V. 9. BIAS pin should be assumed to be at GND +0.3V. ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 4 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Operation Normal Operation The operation of the device is described step-by-step with reference to the timing diagram below. 1. The detector monitors the MOSFET Drain-Source voltage. 2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.6V on the Drain pin. 3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage and current is sourced out of the GATEH pin. 4. The current out of the GATEH pin is sourced into the synchronous MOSFET Gate to turn the device on. 5. The GATEH output voltage is now proportional to the Drain-Source voltage drop across the MOSFET due to the current flowing through the MOSFET. 6. MOSFET conduction continues until the drain current reaches zero. 7. At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage is pulled low by the GATEL, turning the device off. Body Diode Conduction Drain current zero MOSFET Gate Current ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 5 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER 1a) Continuous Conduction Mode (CCM) 1b) Critical Conduction Mode (CrCM) 1c) Discontinuous Conduction Mode (DCM) Figure 1: Typical waveforms ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 6 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Typical Characteristics ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 7 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Typical Characteristics 10 Voltage (V) 6 4 VG 8 VG Voltage (V) 8 10 See Fig.4 VD 2 0 6 4 VD See Fig.4 2 0 -2 -400 -200 0 200 400 600 800 -2 -20 1000 0 20 Time (ns) Switch On Speed 8.6 Supply Current (mA) Time (ns) ton VCC=10V RBIAS=1.8kΩ RREF=3kΩ 100 CLOAD=2.2nF RLOAD=1kΩ toff -25 0 25 50 75 8.5 8.4 15 10 F=100kHz, RBIAS=1.8kΩ RREF=3kΩ, RLOAD=100kΩ 2 4 6 8 10 Supply Current (mA) Supply Current (mA) Vcc=15V Vcc=12V Vcc=10V Vcc= 8V 20 0 0 -25 0 25 50 75 100 125 150 CLOAD=10nF CLOAD=4.7nF CLOAD=2.2nF CLOAD=1nF 10000 100000 Frequency (Hz) Supply Current vs Capacitive Load Document Number DS31945 Rev. 1 - 2 RLOAD=100kΩ 20 18 VCC=10V 16 RBIAS=1.8kΩ 14 RREF=3kΩ 12 RLOAD=100kΩ 10 8 6 4 2 0 1000 Capacitance (nF) ZXGD3101N8 CLOAD=2.2nF Supply Current vs Temperature 35 5 RREF=3kΩ 8.1 Temperature (°C) Switching vs Temperature 25 RBIAS=1.8KΩ 8.2 8.0 -50 100 125 150 F=100kHz VCC=10V 8.3 Temperature (°C) 30 60 Switch Off Speed 1000 10 -50 40 Time (ns) 8 of 14 www.diodes.com Supply Current vs Frequency June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER 10 VCC = 10V 8 VG Gate Voltage (V) VG Gate Voltage (V) 10 IBIAS= 5mA RLOAD=1kΩ 6 IREF= 2mA 4 IREF=2.5mA IREF= 3mA 2 IREF=3.5mA VCC= 10V 8 RLOAD=1kΩ 6 IBIAS= 6mA 4 IBIAS=5.5mA IBIAS= 5mA 2 IREF= 4mA 0 -0.10 IREF= 3mA IBIAS=4.5mA IBIAS= 4mA -0.08 -0.06 -0.04 -0.02 0.00 0 -0.10 VD Drain Voltage (V) -0.08 -0.06 -0.04 -0.02 0.00 VD Drain Voltage (V) Transfer Characteristic Transfer Characteristic Component Selection It is advisable to decouple the ZXGD3101 closely to VCC and ground due to the possibility of high peak gate currents with C1 in Figure 2. The proper selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value for resistor RREF to give a reference current, IREF, of ~3mA. The value of RBIAS must then be 0.6 times the value of RREF giving a bias current, IBIAS, of ~1.6 times IREF. This provides a recommended typical offset voltage of ~20mV. External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption issues or dissipation within the part. RREF = (VCC -0.7V) / 0.003 RBIAS = (VCC -0.3V) / 0.005 Layout considerations The Gate pins should be as close to the MOSFET Gate as possible. Also the ground return loop should be as short as possible. The decoupling capacitor should be close to the VCC and Ground pin, and should be a X7R type. For more detailed information refer to application note AN54.. ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 9 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Figure 2 Example connection for low side synchronous rectification Figure 3: Example connection for high side synchronous rectification ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 10 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Figure 4: Example connections for LLC converter Figure 5: Example connections for Forward converter ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 11 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER Figure 6: Test circuit Figure 7: Timing Diagram ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 12 of 14 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER 0.254 Package Outline and Dimensions E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm D Suggested Pad Layout X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y Marking Information ZXGD3101 = Product Type Marking Code YM = Date Code Marking Y = Year (ex. W = 2009) M = Month (ex. 9 = September) ZXGD 3101 YM Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 ZXGD3101N8 Document Number DS31945 Rev. 1 - 2 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 13 of 14 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3101N8 SYNCHRONOU S R ECTIFIER CONTROLLER IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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