A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits V(BR)DSS RDS(on) ID -20V 0.025Ω -8.0A • High pulse current handling in linear mode • Low on-resistance • Fast switching speed • Low gate drive • Low profile SOIC package Description and Applications This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode. • Inrush protection circuits • DC-DC Converters • Power management functions • Disconnect switches • Motor control Mechanical Data • Case: SO-8 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) D SO-8 G S Top View Ordering Information Product ZXM66P02N8TA Notes: Top View Equivalent Circuit (Note 1) Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 1. For packaging details, go to our website. Marking Information ZXM 66P02 YYWW ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 ZXM = Product Type Marking Code, Line 1 66P02 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 4.5V Pulsed Drain current Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value -20 ±12 -8.0 -6.5 -6.4 -28 -4.15 -28 Unit V V Value 1.56 12.5 2.5 20 80 50 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Symbol (Note 2) PD (Note 3) (Note 2) (Note 3) RθJA Operating and storage temperature range Notes: TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 3. Same as note (3), except the device is measured at t ≤ 10 sec. 4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs – pulse width limited by maximum junction temperature. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition -20 ⎯ ⎯ V ID = -250μA, VGS = 0V ⎯ ⎯ -1 μA VDS = -16V, VGS = 0V IGSS ⎯ ⎯ -100 nA VGS = ±12V, VDS = 0V VGS(th) -0.7 ⎯ ⎯ V ON CHARACTERISTICS Gate Threshold Voltage 0.025 RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 5 & 6) gfs ⎯ 13.3 ⎯ Diode Forward Voltage (Note 5) VSD ⎯ Reverse recovery time (Note 6) trr Reverse recovery charge (Note 6) Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Static Drain-Source On-Resistance (Note 5) 0.045 Ω ID = -250μA, VDS = VGS VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -2.7A S VDS = -10V, ID = -3.2A IS = -3.2A, VGS = 0V ⎯ 0.95 V 23.1 ⎯ ns ⎯ 12.2 ⎯ nC Ciss ⎯ 2068 ⎯ pF Coss ⎯ 1038 ⎯ pF IF = -3.2A, di/dt = 100A/μs DYNAMIC CHARACTERISTICS (Note 6) Crss ⎯ 506 ⎯ pF Total Gate Charge (Note 7) Qg ⎯ 43.3 ⎯ nC Gate-Source Charge (Note 7) Qgs ⎯ 3.5 ⎯ nC Gate-Drain Charge (Note 7) Qgd ⎯ 21.3 ⎯ nC Turn-On Delay Time (Note 7) tD(on) ⎯ 14.0 ⎯ ns Turn-On Rise Time (Note 7) tr ⎯ 44.3 ⎯ ns Turn-Off Delay Time (Note 7) tD(off) ⎯ 118.4 ⎯ ns tf ⎯ 98.4 ⎯ ns Turn-Off Fall Time (Note 7) Notes: VDS = -15V, VGS = 0V F = 1MHz VGS = -4.5V, VDS = -10V, ID = -3.2A VDD = -10V, VGS = -5V ID = -3.2A, RG = 6.0Ω 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 2 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Typical Characteristics -ID Drain Current (A) 4.5V 10V 2.5V 10 2V 1 1.5V -VGS 0.1 -ID Drain Current (A) 10V T = 25°C 4.5V T = 150°C 2.5V 10 2V 1.5V 1 -VGS 0.1 1V 0.01 0.1 1 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) -ID Drain Current (A) 1.6 1 T = 150°C T = 25°C 0.1 0.01 -VDS = 10V 1E-3 500.0m 1.0 1.5 2.0 VGS = -4.5V 1.4 1.0 0.8 0.6 1 2.5V 4.5V 10V 1 1 Document Number DS31965 Rev. 2 - 2 150 T = 150°C T = 25°C 0.01 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) -ID Drain Current (A) ZXM66P02N8 100 0.1 10 On-Resistance v Drain Current 50 10 1E-3 0.01 0.1 0 Normalised Curves v Temperature T = 25°C 0.1 ID = -250uA -50 -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 2V VGS(th) VGS = VDS Tj Junction Temperature (°C) Typical Transfer Characteristics 1.5V RDS(on) 1.2 -VGS Gate-Source Voltage (V) -VGS ID = - 3.2A Source-Drain Diode Forward Voltage 3 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 Package Outline Dimensions θ DIM Inches Millimeters DIM Inches Min. Millimeters Max. Max. Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 θ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. Min. 1.27 BSC Suggested Pad Layout 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.27 0.050 mm inches ZXM66P02N8 Document Number DS31965 Rev. 2 - 2 4 of 5 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXM66P02N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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