A Product Line of Diodes Incorporated DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V(BR)DSS RDS(on) Max @ TA = 25°C (Note 4) -20V 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A • • • • • • • 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 3KV Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Portable electronics Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain DFN1006-3 S Gate D G ESD PROTECTED TO 3kV Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 3) Part Number DMP21D0UFB-7B Notes: Marking NG Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMP21D0UFB-7B NG NG = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 1 of 6 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (Note 6) Thermal Characteristics Value -20 ±8 Unit V V ID -0.77 -0.55 -1.17 A IDM -5.0 A Value 0.43 0.99 293 126 -55 to +150 Unit W W °C/W °C/W °C TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Steady State Continuous Drain Current Symbol VDSS VGSS @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD PD RθJA RθJA TJ, TSTG Thermal Characteristics P(pk), PEAK TRANSIENT POWER (W) 10 9 Single Pulse RθJA = 120°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 8 7 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (SEC) Fig. 1 Single Pulse Maximum Power Dissipation 100 1,000 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 120°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response 2 of 6 www.diodes.com 10 100 1,000 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) - -0.7 V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 50 - - 495 690 960 -1.2 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -400mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 80 15.5 10.4 599.2 1.54 0.91 0.14 0.24 6.7 9.2 49.2 34.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - mΩ mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V,VDS = -15V,ID = -1A VGS = -4.5V, VDS = -15V, ID = -1A VDS = -10V, -ID = 1A VGS = -4.5V, RG = 6Ω 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. Typical Characteristics 2.0 2.0 VGS = -4.5V VGS = -4.0V VGS = -2.5V 1.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V VGS = -2.0V 1.0 VGS = -1.8V 0.5 VGS = -1.5V 1.5 VDS = -5V 1.0 0.5 TA = 150°C T A = 125°C VGS = -1.2V 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 0 5 3 of 6 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3.0 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UFB 0.9 0.8 0.7 0.6 VGS = -1.8V 0.5 0.4 VGS = -2.5V 0.3 VGS = -4.5V 0.2 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 VGS = -5.0V ID = -500mA 0.9 VGS = -2.5V ID = -250mA 0.7 0.5 -50 VGS = -4.5V 0.6 0.5 T A = 150°C 0.4 TA = 125°C TA = 85°C 0.3 TA = 25°C 0.2 T A = -55°C 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2.0 0.8 0.7 0.6 VGS = -2.5V ID = -250mA 0.5 0.4 0.3 VGS = -5.0V ID = -500mA 0.2 0.1 0 -50 2.0 1.4 1.8 1.2 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.7 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature 1.0 ID = -1mA 0.8 0.6 0.8 ID = -250µA 0.4 1.6 1.4 1.2 T A = 25°C 1.0 0.8 0.6 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 4 of 6 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB 100,000 IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) 10,000 1,000 TA = 150°C TA = 125°C 100 T A = 85°C 10 10,000 TA = 25°C 1 0 TA = 125°C 1,000 100 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage T A = 85°C T A = 25°C 10 TA = -55°C 1 0.1 0 4 T A = 150°C 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage IGSS, LEAKAGE CURRENT (nA) 100,000 10,000 TA = 150°C TA = 125°C 1,000 100 TA = 85°C TA = 25°C 10 T A = -55°C 1 0.1 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.13 Leakage Current vs. Gate-Source Voltage Package Outline Dimensions A A1 D b1 E e b2 L2 DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 L3 DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 5 of 6 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFB Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com DMP21D0UFB Datasheet Number: DS35277 Rev. 2 - 2 6 of 6 www.diodes.com June 2011 © Diodes Incorporated