VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-204AL (DO-41) IF(AV) 1A • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) VR 30 V VF at IF 0.5 V IRM max. 12 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS See Electrical table DESCRIPTION The VS-1N5818... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1 Apk, TJ = 25 °C TJ Range VALUES UNITS 1.0 A 30 V 225 A 0.55 V - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VS-1N5818 VS-1N5818-M3 UNITS 30 30 V VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Revision: 21-Sep-11 TEST CONDITIONS VALUES 50 % duty cycle at TL = 90 °C, rectangular waveform 1.0 5 µs sine or 3 µs rect. pulse 225 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied UNITS A 35 Document Number: 93256 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A VFM (1) TJ = 25 °C Maximum junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) 0.71 3A 0.875 1A 0.5 TJ = 125 °C 2A Maximum reverse leakage current See fig. 2 3A 0.77 TJ = 25 °C 1.0 TJ = 100 °C VR = Rated VR mA 6.0 12 CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 60 LS Measured lead to lead 5 mm from package body Rated VR V 0.61 TJ = 125 °C dV/dt UNITS 0.55 2A Maximum forward voltage drop See fig. 1 VALUES pF 8.0 nH 10 000 V/µs VALUES UNITS - 40 to 150 °C 80 °C/W Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to lead RthJL (1) TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style DO-204AL (DO-41) 0.33 g 0.012 oz. 1N5818 Note (1) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package Revision: 21-Sep-11 Document Number: 93256 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 Vishay Semiconductors 160 10 Allowable Lead Temperature (°C) IF - Instantaneous Forward Current (A) www.vishay.com 1 T = 150 °C T = 125 °C T = 25 °C 0.1 0.2 0.4 0.6 0.8 1 120 100 Square wave (D = 0.50) Rated VR applied 60 see note (1) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) 93256_04 Fig. 4 - Typical Allowable Lead Temperature vs. Average Forward Current 100 Average Power Loss (W) 0.8 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.6 RMS Limit 10 20 30 0.2 CT - Junction Capacitance (pF) TJ = 25°C 10 20 30 40 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0.5 1 1.5 93256_05 100 10 0 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 0 0 40 50 IFSM - Non-Repetitive Surge Current (A) 0 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC 0.4 0.0001 93256_03 80 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 93256_02 DC 40 0 93256_01 IR - Reverse Current (mA) 140 1000 At Any Rated Load Condition And With rated VRRM Applied Following Surge 100 10 10 93256_06 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 6 - Typical Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 21-Sep-11 Document Number: 93256 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 1N5818 TR -M3 1 2 3 4 1 - Vishay Semiconductors product 2 - Part number: 1N5818 = 1 A, 30 V 3 - TR = Tape and reel package None = Bulk package 4 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-1N5818 1000 1000 PACKAGING DESCRIPTION Bulk VS-1N5818TR 5000 5000 Tape and reel VS-1N5818-M3 1000 1000 Bulk VS-1N5818TR-M3 5000 5000 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93256 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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