VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 30 A FEATURES Base common cathode 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TO-220AB Anode • Guard ring for enhanced ruggedness and long term reliability Anode 2 1 Common 3 cathode • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 20 A VR 150 V VF at IF 0.72 V IRM max. 20 mA at 125 °C TJ max. 175 °C Diode variation Common cathode EAS 0.4 mJ • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-60CTQ150... center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 60 A Rectangular waveform VRRM 150 V IFSM tp = 5 μs sine 710 A VF 30 Apk, TJ = 125 °C (typical, per leg) 0.69 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-60CTQ150PbF VS-60CTQ150-N3 UNITS 150 150 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 137 °C, rectangular waveform VALUES UNITS 30 per leg 60 per device Following any rated load condition and with rated VRRM applied A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.9 A, L = 1 mH 0.4 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.9 A Repetitive avalanche current per leg Revision: 29-Aug-11 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse 710 270 Document Number: 94240 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 30 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 60 A 30 A TJ = 125 °C 60 A Maximum reverse leakage current per leg See fig. 2 IRM Typical junction capacitance per leg CT Typical series inductance per leg LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C TYP MAX. 0.83 0.88 UNITS 0.98 1.09 0.67 0.72 0.82 0.87 7 75 μA 7.2 20 mA - 650 pF V Measured lead to lead 5 mm from package body - 7.5 nH Rated VR - 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case TEST CONDITIONS TJ, TStg per leg per package Typical thermal resistance, case to heatsink RthJC RthCS DC operation See fig. 4 Marking device Revision: 29-Aug-11 UNITS - 55 to 175 °C 1.2 DC operation 0.6 Mounting surface, smooth and greased 0.25 °C/W 6 g 0.21 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AB 60CTQ150 Document Number: 94240 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.2 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 20 40 60 80 100 120 140 160 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 125 °C 100 0 40 80 160 120 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM 0.1 0.01 0.001 0.00001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 29-Aug-11 Document Number: 94240 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ150PbF, VS-60CTQ150-N3 Vishay Semiconductors 180 35 170 30 160 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 150 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 100 RMS limit 25 DC 20 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 15 10 5 See note (1) 0 90 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Aug-11 Document Number: 94240 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60CTQ150PbF, VS-60CTQ150-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 C T Q 1 2 3 4 5 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration 150 PbF 6 7 C = Common cathode 4 - Package T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (150 = 150 V) 7 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-60CTQ150PbF 50 1000 Antistatic plastic tube VS-60CTQ150-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 29-Aug-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Document Number: 94240 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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