SECOS UMT1N

UMT1N
-0.15A , -60V
Dual PNP General Purpose Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-363
FEATURES
Two 2SA1037AK chips in a package.
Mounting possible with SOT-363 automatic
mounting machines.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
A
E
6
4
5
L
B
MARKING:
:
1
F
T1
2
3
C
H
J
K
DG
PACKAGE INFORMATION
Package
MPQ
Leader Size
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
SOT-363
3K
7 inch
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-base voltage
V(BR)CBO
-60
V
Collector-emitter voltage
V(BR)CEO
-50
V
Emitter-base voltage
V(BR)EBO
-6
V
Collector current
IC
-150
mA
Collector Power dissipation
PC
150
mW
TJ, TSTG
150, -55 ~ 150
℃
Junction & Storage temperature
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
V(BR)CBO
-60
-
-
Collector-emitter breakdown voltage
V(BR)CEO
-50
-
-
Emitter-base breakdown voltage
V(BR)EBO
-6
-
-
Parameter
Unit
Test Conditions
IC= -50µA, IE=0
V
IC= -1mA , IB=0
IE= -50µA , IC=0
Collector cut-off current
ICBO
-
-
-0.1
µA
VCB= -60V, IE=0
Emitter cut-off current
IEBO
-
-
-0.1
µA
VEB= -6V, IC=0
DC current gain
hFE
120
-
560
VCE(sat)
-
-
-0.5
V
IC= -50mA, IB= -5mA
fT
-
140
-
MHz
VCE= -12V, IE=2mA,
f=100MHz
Cob
-
-
5
pF
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
VCE= -6V, IC= -1mA
VCB=-12V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
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