BC846S Plastic-Encapsulate Multi-Chip (NPN+NPN) Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-363 Two transistors in one package Reduces number of components and board space No mutual interference between the transistors A E 6 5 4 MARKING： ： L B 4Ft 1 F PACKAGE INFORMATION Top View Package MPQ Leader Size SOT-363 3K 7 inch 2 3 C J K DG Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. A B C D E F H Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V(BR)CBO 80 V Collector-Emitter Voltage V(BR)CEO 65 V Emitter-Base Voltage V(BR)EBO 6 V Collector Current IC 0.1 A Collector Power Dissipation PC 200 mW TJ, TSTG 150, -65~150 °C Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Min. Typ. Max. V(BR)CBO 80 - - Collector-Emitter Breakdown Voltage V(BR)CEO 65 - - Emitter-Base Breakdown Voltage V(BR)EBO 6 - - Collector Cut-Off Current ICBO - - 15 nA VCB= 30V, IE=0 Emitter Cut-Off Current IEBO - - 5 µA VEB=5V, IC=0 DC Current Gain hFE 110 - - VCE(sat) - - 0.1 V IC=10mA, IB=0.5mA VCE(sat) - - 0.3 V IC=100mA, IB=5mA VBE(sat) - 0.77 - V IC=10mA, IB=0.5mA fT 100 - - MHz Cob - - 1.5 pF Parameter Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 19-Sep-2011 Rev. A Unit Test Conditions IC=10µA, IE=0 V IC=10mA , IB=0 IE=10µA , IC=0 VCE=5V, IC=2mA VCB=5V, IE=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1