New Product U1B, U1C, U1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V IFSM 30 A trr 15 ns VF at IF = 1.0 A 0.76 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U1B U1C U1D U1B U1C U1D 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 89400 Revision: 19-Apr-11 V For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.6 A Instantaneous forward voltage TA = 25 °C IF = 1.0 A VF (1) IF = 0.6 A TA = 100 °C IF = 1.0 A Reverse current TA = 25 °C Rated VR IR (2) TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse recovery time SYMBOL TYP. MAX. 0.82 0.87 0.87 0.92 0.71 0.78 0.76 0.84 - 5.0 55 100 - 15 24 - TA = 25 °C IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM Storage charge IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz trr TA = 25 °C TA = 100 °C 29 - TA = 25 °C 7 - 13 - 6.8 - Qrr TA = 100 °C CJ UNIT V μA ns nC pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance U1B U1C RJA (1) 115 RJM (1) 22 U1D UNIT °C/W Note (1) Free air, mounted on recommended copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel U1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 1.0 D = 0.8 1.0 Average Power Loss (W) Average Forward Current (A) D = 0.5 0.8 0.6 0.4 0.2 D = 0.3 0.8 D = 0.2 D = 1.0 D = 0.1 0.6 0.4 T 0.2 D = tp/T tp 0.8 1.0 0 0 80 90 www.vishay.com 2 100 110 120 130 140 150 0 0.2 0.4 0.6 1.2 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Derating Curve Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 89400 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor 10 TA = 150 °C 1 Junction Capactiance (pF) Instantaneous Forward Current (A) 10 TA = 125 °C TA = 100 °C TA = 25 °C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1 0.1 1.3 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 1000 Instantaneous Reverse Current (μA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 100 TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 Junction to Ambient 10 1 0.001 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89400 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. 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