HTSEMI EMB4

EMB4
General purpose transistors (dual digital transistors)
FEATURES
z
Two DTA114T chips in a package
SOT-563
Marking: B4
(3)
Equivalent circuit
(2)
(1)
1
R1
R1
(4)
(5)
(6)
Absolute maximum ratings (Ta=25℃)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA, IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V, IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.5
μA
DC current gain
hFE
VCE=-5V, IC=-1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Intput resistance
R1
100
600
IC=-10mA, IB=-1mA
-0.3
VCE=-10V, IC=-5mA, f=100MHz
-
250
7
MHz
13
1
JinYu
semiconductor
V
www.htsemi.com
Date:2011/ 05
Ω