BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • This diode is also available in a DO-35 case with type designation BAT86. • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications • Applications where a very low forward voltage is required 94 9371 Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box Parts Table Part BAS86 Ordering code Type marking Remarks BAS86-GS18 or BAS86-GS08 - Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Continuous reverse voltage Parameter Test condition VR 50 Forward continuous current IF Repetitive peak forward current Power dissipation 1) tp < 1 s, ν ≤ 0.5 1) 200 Unit V 1) mA IFRM 500 1) mA Ptot 1) mW Value Unit 1) K/W 200 Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol RthJA 300 Tj 125 °C Ambient operating temperature range Tamb - 65 to + 125 °C Storage temperature range Tstg - 65 to +150 °C Junction temperature 1) Valid provided that electrodes are kept at ambient temperature Document Number 85511 Rev. 1.8, 13-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAS86 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min. IR = 10 µA (pulsed) V(BR) Max. Unit 50 VR = 40 V IR 5 µA Pulse test tp < 300 µs, IF = 0.1 mA, δ < 2 % VF 200 300 mV Pulse test tp < 300 µs, IF = 1 mA, δ < 2 % VF 275 380 mV Pulse test tp < 300 µs, IF = 10 mA, δ < 2 % VF 365 450 mV Pulse test tp < 300 µs, IF = 30 mA, δ < 2 % VF 460 600 mV Pulse test tp < 300 µs, IF = 100 mA, δ < 2 % VF 700 900 mV VR = 1 V, f = 1 MHz CD 8 pF IF = 10 mA, IR = 10 mA, Irr = 1 mA, trr 5 ns Reverse breakdown voltage Leakage current Forward voltage Diode capacitance Reverse recovery time Typ. V Typical Characteristics 500 1000 VR = 50 V 450 Tj = 125 °C 400 350 300 250 PR - Limit at 100 % VR 200 150 100 PR - Limit at 80 % VR R thJA = 540 K/W IF - Forward Current (A) PR - Reverse Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 100 Tj = 25 °C 10 1 50 0 25 0.1 50 75 100 125 Tj - Junction Temperature (°C) 15827 0 150 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 9 C D - Diode Capacitance (pF) I R - Reverse Current (µA) 1000 100 10 75 100 125 150 Tj - Junction Temperature (°C) 2 15830 f = 1 MHz 8 7 6 5 4 3 2 1 0 50 Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 1.5 10 V R = V RRM 15828 1.0 Figure 3. Forward Current vs. Forward Voltage 10000 1 25 0.5 V F - Forward Voltage (V) 15829 0.1 1 10 100 V R - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85511 [email protected], [email protected], [email protected] Rev. 1.8, 13-Jan-11 BAS86 Vishay Semiconductors Package Dimensions in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85511 Rev. 1.8, 13-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000