BAV23CLT1G Dual High Voltage Common Cathode Switching Diode Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 2 • • • • http://onsemi.com ESD Rating − Machine Model: Class C Fast Switching Speed Switching Application This is a Halide−Free Device This is a Pb−Free Device ANODE 1 3 CATHODE 2 ANODE Typical Applications 3 • LCD TV • Power Supply • Industrial 1 2 SOT−23 CASE 318 STYLE 9 MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Non−Repetitive Peak Forward Surge Current @ t = 1.0 s @ t = 100 s @ t = 10 ms Peak Forward Surge Current Non−Repetitive Peak Per Human Body Model Per Machine Model Symbol Value Unit VR 250 V VRRM 250 V IF 400 mA IFSM 9.0 3.0 1.7 A IFM(surge) 625 mAdc HBM MM 4.0 400 kV V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 3 AA MG G 1 2 AA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BAV23CLT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 0 1 Publication Order Number: BAV23CLT1/D BAV23CLT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 265 2.1 mW mW/°C SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) RJA 472 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 263 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 289 °C/W PD 345 2.7 mW mW/°C RJA 362 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 251 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 250 °C/W PD 390 3.1 mW mW/°C RJA 321 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 159 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 138 °C/W PD 540 4.3 mW mW/°C RJA 231 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 148 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 119 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) mm2, mm2, 1. FR-4 @ 100 1 oz. copper traces, still air. 2 oz. copper traces, still air. 2. FR-4 @ 500 3. Dual heated values assume total power is sum of two equally powered channels ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS IR Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CT − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr − 150 ns http://onsemi.com 2 mV BAV23CLT1G 100 Ir, REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 1 −40°C 0.1 0°C 25°C 0.01 75°C 125°C 150°C 0.001 0.2 0.6 0.4 0.8 1.0 1.2 125°C 1 75°C 0.1 25°C 0.01 0°C 0.001 0.0001 1.4 150°C 10 −40°C 0 50 100 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Reverse Current 250 CT, TOTAL CAPACITANCE (pF) 3.0 TA = 25°C f = 1 MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 4. Recovery Time Equivalent Test Circuit http://onsemi.com 3 BAV23CLT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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