VISHAY BAS40-05-V

BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
BAS40-00-V
BAS40-04-V
3
3
Top View
1
2
1
2
BAS40-05-V
BAS40-06-V
3
3
Mechanical Data
Top View
Case: SOT-23
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
1
1
2
2
18435
Parts Table
Part
Ordering code
Type Marking
Remarks
BAS40-00-V
BAS40-00-V-GS18 or BAS40-00-V-GS08
43
Tape and Reel
BAS40-04-V
BAS40-04-V-GS18 or BAS40-04-V-GS08
44
Tape and Reel
BAS40-05-V
BAS40-05-V-GS18 or BAS40-05-V-GS08
45
Tape and Reel
BAS40-06-V
BAS40-06-V-GS18 or BAS40-06-V-GS08
46
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Power dissipation
1)
Value
Unit
40
V
1)
mA
IFSM
6001)
mA
Ptot
1)
mW
IF
Forward continuous current
Surge forward current
Symbol
VRRM = VRWM = VR
tp < 1 s
1)
200
200
Device on fiberglass substrate, see layout on next page.
Document Number 85701
Rev. 1.8, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
5001)
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
IR = 10 μA (pulsed)
V(BR)
40
Typ.
Max
Unit
Pulse test VR = 30 V, tp < 300 µs
IR
20
100
nA
Pulse test tp < 300 µs,
IF = 1 mA
VF
380
mV
Pulse test tp < 300 µs,
IF = 40 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
5
pF
IF = IR = 10 mA, iR = 1 mA,
RL = 100 Ω
trr
5
ns
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
V
4
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
www.vishay.com
2
17451
For technical questions within your region, please contact one of the following: Document Number 85701
[email protected], [email protected], [email protected]
Rev. 1.8, 05-Aug-10
BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Package Dimensions in millimeters (inches): SOT-23
0.9 (0.035)
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Document Number 85701
Rev. 1.8, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Revision: 12-Mar-12
1
Document Number: 91000