VISHAY BAS16-V_12

BAS16-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
• Surface mount package ideally suited for
automatic insertion
• High conductance
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
1
2
16923
Mechanical Data
Case: SOT-23
Weight: approx. 8.0 mg
Polarity: cathode band
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16-V
Ordering code
Marking
Remarks
BAS16-V-GS18 or BAS16-V_GS08
A6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Non repetitive peak reverse
voltage
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Symbol
Value
Unit
VRM
100
V
VRRM = VRWM = VR
75
V
tp = 1 s
IFSM
1
A
tp =1 µs
IFSM
2
A
Half wave rectification with
resistive load and f ≥ 50 MHz, on
ceramic substrate
8 mm x10 mm x 0.7 mm
IFAV
150
mA
Forward current
On ceramic substrate
8 mm x 10 mm x 0.7 mm
IF
300
mA
Power dissipation
On ceramic substrate
8 mm x 10 mm x 0.7 mm
Ptot
350
mW
Peak forward surge current
Average forward current
Document Number 85539
Rev. 1.6, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS16-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Symbol
Value
Unit
On ceramic substrate
8 mm x 10 mm x 0.7 mm
RthJA
357
K/W
Tj = Tstg
- 55 to + 150
°C
Junction and storage
temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Symbol
Max.
Unit
IF = 1 mA
VF
Min.
Typ.
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1
V
IF = 150 mA
VF
1.25
V
VR = 75 V
IR
1
µA
VR = 75 V, Tj = 150 °C
IR
50
µA
VR = 25 V, Tj = 150 °C
IR
30
µA
VR = 0, f = 1 MHz
CD
4
pF
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
6
ns
Diode capacitance
Reverse recovery time
Test condition
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IF - Forward Current (mA)
100
Tj = 100 °C
10
25 °C
1
0.1
IR – Reverse Current (nA)
10000
1000
V R = 20 V
1000
10
1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
V F - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
www.vishay.com
2
100
0
14357
25
50 75 100 125 150 175 200
Tj – Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
For technical questions within your region, please contact one of the following: Document Number 85539
[email protected], [email protected], [email protected]
Rev. 1.6, 12-Aug-10
BAS16-V
Vishay Semiconductors
Package Dimensions in millimeters (inches): SOT-23
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
o
0.5 (0.020)
0.45 (0.018)
0.9 (0.035)
1.15 (0.045)
8°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.550 ref. (0.022 ref.)
0.1 (0.004) max.
3.1 (0.122)
2.8 (0.110)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
1.43 (0.056)
1 (0.039)
0.9 (0.035)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Document Number 85539
Rev. 1.6, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
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Revision: 12-Mar-12
1
Document Number: 91000