SEMICONDUCTOR BCX19 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE E B L L D Super Mini Packaged Transistors for Hybrid Circuits. H MAXIMUM RATING (Ta=25 3 G A 2 1 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Emitter Current IE -500 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -65 150 P J N M K C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR Storage Temperature Range SOT-23 Marking Lot No. U1 Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 45 - - V Collector-Emitter Breakdown Voltage V(BR)CES IC=10 A, VBE=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5.0 - - V VCB=20V, IE=0 - - 100 nA Ta=150 , VCB=20V, IE=0 - - 5.0 A VCE=1V, IC=100mA 100 - 600 VCE=1V, IC=300mA 70 - - VCE=1V, IC=500mA 40 - - ICBO Collector Cut-off Current hFE DC Current Gain Base-Emitter Voltage VBE(ON) VCE=1V, IC=500mA - - 1.2 V Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.62 V IC=10mA, VCE=5V, f=100MHz - 200 - MHz VCB=10V, f=1MHz - 6.0 - pF fT Transition Frequency Collector Output Capacitance 1999. 11. 30 Revision No : 2 Cob 1/1