SEMICONDUCTOR BCV71/72, BCW71/72 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. FEATURES E B L L Super Mini Packaged Transistor for Hybrid Circuits. 3 H G A 2 D For Complementary with PNP Type BCW69/70/89. 1 MAXIMUM RATING (Ta=25℃) Voltage BCV71/72 Collector-Emitter BCW71/72 Voltage BCV71/72 VCBO VCEO 50 60 45 60 V 5 V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Tstg -65～150 ℃ Storage Temperature Range MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER V VEBO Emitter-Base Voltage P J BCW71/72 P UNIT K Collector-Base RATING N SYMBOL C CHARACTERISTIC DIM A B C D E G H J K L M N P 2. BASE 3. COLLECTOR SOT-23 MARK SPEC 2002. 6. 18 TYPE MARK BCW71 K1 BCW72 K2 BCV71 K7 BCV72 K8 Revision No : 2 Marking Lot No. Type Name 1/2 BCV71/72, BCW71/72 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector-Emitter BCW71/72 Breakdown Voltage BCV71/72 Collector-Base BCW71/72 Breakdown Voltage BCV71/72 Emitter-Base Breakdown Voltage SYMBOL BCV72/BCW72 BCV71/BCW71 - - 60 - - 50 - - 60 - - V(BR)EBO IE=10μ A, IC=0 5.0 - - V VCB=20V, IE=0 - - 100 nA Ta=100℃, VCB=20V, IE=0 - - 10 μA - 100 - - 160 - 110 - 220 200 - 450 550 - 700 IC=10mA, IB=0.5mA - 750 - IC=50mA, IB=2.5mA - 870 - IC=10mA, IB=0.5mA - - 250 IC=50mA, IB=2.5mA - 230 - IC=10mA, VCE=5V, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - - 4.0 pF - - 10 dB VCE=5V, IC=10μA hFE VCE=5V, IC=2mA VBE(ON) Base-Emitter Saturation Voltage VBE(sat) Collector-Emitter Saturation Voltage VCE(sat) fT Collector Output Capacitance Cob Noise Figure NF Revision No : 2 45 UNIT IC=10μA, IE=0 Base-Emitter Voltage 2002. 6. 18 MAX. V(BR)CBO BCV72/BCW72 Transition Frequency TYP. IC=2mA, IB=0 BCV71/BCW71 DC Current Gain MIN. V(BR)CEO ICBO Collector Cut-off Current TEST CONDITION VCE=5V, IC=2mA IC=0.2mA, VCE=5V, Δf=200Hz Rg=2kΩ, f=1kHz V V mV mV mV 2/2