SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M ・Complementary to BC817W. B M D J 3 1 G A 2 MAXIMUM RATING (Ta=25℃) RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range H L SYMBOL C CHARACTERISTIC N N K DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.10 MIN 1. EMITTER 2. BASE 3. COLLECTOR USM ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 - 630 hFE(2) VCE=-1V, IC=-500mA 40 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT 80 - - MHz - 9 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz 16:100～250 , 25:160～400 , 40:250～630 Marking MARK SPEC Lot No. TYPE. BC807W-16 BC807W-25 BC807W-40 MARK 1M 1N 1R Type Name 2008. 9. 2 Revision No : 0 1/2 BC807W h FE - I C COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 50 30 -600 -5 -2 -200 -100 -300 -1000 I B =-1mA 0 0 -1 -2 -0.1 Ta=25 C Ta=-25 C -0.01 -10 -30 -100 -300 TRANSITION FREQUENCY f T (MHz) C 100 -10 -3 -0.4 -0.6 -0.8 -1.0 fT - I C P C - Ta 100 30 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 2008. 9. 2 -30 BASE-EMITTER VOLTAGE V BE (V) COMMON EMITTER Ta=25 C VCE =-5V -1 -100 -1 -0.2 -1000 500 10 -300 COLLECTOR CURRENT I C (mA) 300 -6 COMMON EMITTER VCE =1V Ta= COLLECTOR CURRENT I C (mA) Ta=100 C Revision No : 0 -1000 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1000 COMMON EMITTER I C /IB =25 -0.3 -0.03 -5 I C - V BE VCE(sat) - I C -1 -4 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT IC (mA) -3 -3 Ta= -25 C -30 -3 -400 0 10 -10 -4 C 100 COMMON EMITTER Ta=25 C 25 300 -800 Ta= 500 COLLECTOR CURRENT IC (mA) DC CURRENT GAIN h FE 1000 I C - VCE (LOW VOLTAGE REGION) 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2