SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE B C A For Complementary with PNP Type BC559/560. N E K MAXIMUM RATING (Ta=25 G ) J D SYMBOL 30 VCBO Collector-Base Voltage BC550 BC549 V 50 VEBO 5 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Emitter-Base Voltage Storage Temperature Range F V 45 L BC550 H F 30 VCEO Collector-Emitter Voltage UNIT 1 2 C BC549 RATING 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC549 Breakdown Voltage BC550 Collector-Base BC549 Breakdown Voltage BC550 Emitter-Base Breakdown Voltage Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. 30 - - 45 - - 30 - - 50 - - UNIT V(BR)CEO IC=10mA, IB=0 V(BR)CBO IC=10 A, IE=0 V(BR)EBO IE=10 A, IC=0 5.0 - - V ICBO VCB=30V, IE=0 - - 15 nA V V hFE(Note) IC=2mA, VCE=5V 110 - 800 Base-Emitter Voltage VBE(ON) IC=2mA, VCE=5V 0.55 - 0.7 V Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 - V IC=10mA, VCE=5V, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - - 4.5 pF IC=200 A, VCE=5V - - 4.0 Rg=10k - - 10 DC Current Gain fT Transition Frequency Cob Collector Output Capacitance BC549 Noise Figure NF BC550 Note : hFE Classification A:110 1999. 11. 30 220, B:200 450, Revision No : 2 , f=1kHz dB C:420 800 1/1