BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage VEBO −6.0 Vdc Collector Current − Continuous IC −500 mAdc Total Device Dissipation @ TA = 25°C Derate above = 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 THERMAL CHARACTERISTICS 12 3 STRAIGHT LEAD BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BF 493S AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 BF493SG Package Shipping TO−92 (Pb−Free) 5000 Units / Bulk Publication Order Number: BF493S/D BF493S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) V(BR)CEO −350 − Vdc Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −350 − Vdc Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO −6.0 − Vdc Collector Cutoff Current (VCE = −250 Vdc) ICES − −10 nAdc Emitter Cutoff Current (VEB = −6.0 Vdc, IC = 0) IEBO − 0.1 mAdc Collector Cutoff Current (VCB = −250 Vdc, IE = 0, TA = 25°C) (VCB = −250 Vdc, IE = 0, TA = 100°C) ICBO − − −0.005 −1.0 25 40 − − OFF CHARACTERISTICS mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −2.0 Vdc Base −Emitter On Voltage (IC = −20 mA, IB = −2.0 mA) VBE(sat) − −2.0 Vdc fT 50 − MHz Cre − 1.6 pF − DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Common−Emitter Feedback Capacitance (VCB = −100 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 150 TJ = +125°C VCE = −10 Vdc hFE, DC CURRENT GAIN 100 +25°C 70 50 −55°C 30 20 15 −1.0 −2.0 −3.0 −5.0 −7.0 −10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 −20 −30 −50 −80 −100 f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) BF493S 100 C, CAPACITANCE (pF) 50 Cib 20 10 5.0 2.0 Ccb 1.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1000 VR, REVERSE VOLTAGE (VOLTS) 100 60 40 30 20 0 −1.0 Figure 2. Capacitances −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −50 −500 IC, COLLECTOR CURRENT (mA) −0.8 V, VOLTAGE (VOLTS) −2.0 VBE @ VCE = −10 V −0.6 −0.4 −0.2 VCE(sat) @ IC/IB = 10 mA −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 Figure 3. Current−Gain — Bandwidth Product −1.0 0 −1.0 TJ = 25°C VCE = −20 Vdc 80 −50 100 ms 1.0 ms 1.0 s −200 −100 MPSA93 −50 −20 1.5 WATT THERMAL LIMITATION @ TC = 25°C 625 mW THERMAL LIMITATION @ TA = 25°C −10 −5.0 −3.0 −100 Figure 4. “On” Voltages MPSA92 BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150°C −5.0 −100 −200 −300 −10 −20 −30 −50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Active Region — Safe Operating Area http://onsemi.com 3 BF493S PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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