MPSW42 One Watt High Voltage Transistor NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 300 Vdc Collector −Base Voltage VCBO 300 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W 2 BASE 1 EMITTER 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS W42 AYWW G G MPSW42 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSW42 MPSW42G MPSW42RLRA MPSW42RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 7 1 Package Shipping† TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW42/D MPSW42 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 300 − Vdc Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO − 0.1 mAdc 25 40 40 − − − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) − 0.9 Vdc fT 50 − MHz Ccb − 3.0 pF SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 MPSW42 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 -55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 0.6 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. ”ON” Voltages http://onsemi.com 3 MPSW42 PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B R STRAIGHT LEAD BULK PACK P L F K D X X G J H V C SECTION X−X N 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A BENT LEAD TAPE & REEL AMMO PACK R B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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