BF421, BF423 High Voltage Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit Collector −Emitter Voltage VCEO −300 −250 Vdc Collector −Base Voltage VCBO −300 −250 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Peak ICM 100 Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg Collector Current − Continuous 830 6.6 mA 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM COLLECTOR 2 °C BF 42x AYWW G G 3 BASE THERMAL CHARACTERISTICS Characteristic 3 STRAIGHT LEAD BULK PACK mW mW/°C −55 to +150 1 12 TO−92 CASE 29 STYLE 14 Symbol Thermal Resistance, Junction−to−Ambient RqJA Thermal Resistance, Junction−to−Lead RqJL Max Unit 1 EMITTER °C/W 150 BF42x = Device Code x = 1 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package °C/W 68 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of 5 mm. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BF421ZL1G TO−92 (Pb−Free) 2000/Ammo Pack BF423G TO−92 (Pb−Free) 5000 Units/Box BF423ZL1G TO−92 (Pb−Free) 2000/Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 5 1 Publication Order Number: BF421/D BF421, BF423 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −300 −250 − − −300 −250 − − −5.0 −5.0 − − − − −0.01 − − − −100 − 50 50 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) BF421 BF423 Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) BF421 BF423 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) BF421 BF423 Collector Cutoff Current (VCB = −200 Vdc, IE = 0) BF421 BF423 Emitter Cutoff Current (VEB = −5.0 Vdc, IC = 0) BF421 BF423 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −25 mA, VCE = −20 Vdc) BF421 BF423 hFE − Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base −Emitter Saturation Voltage (IC = −20 mA, IB = −2.0 mA) VBE(sat) − −2.0 Vdc fT 60 − MHz Cre − 2.8 pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = −30 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 300 h FE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 100 BF421, BF423 f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 1 3 Figure 2. Capacitance 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages 1 IC, COLLECTOR CURRENT (A) V, VOLTAGE (VOLTS) 1.2 10 ms 0.1 1.0 s 0.01 0.001 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 1000 BF421, BF423 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 029−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 N BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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