BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n n n n n n n n n n Low noise high gain microwave MMIC Applicable between 40 MHz and 6 GHz Integrated temperature stabilized bias for easy design Bias current configurable with external resistor Noise figure NF = 0.80 dB at 1.575 GHz Insertion power gain = 18.3 dB at 1.575 GHz 110 GHz transit frequency - SiGe:C technology Power-down mode current consumption < 1 µA Optimized performance at low 5 mA supply current ESD protection > 1 kV Human Body Model (HBM) on all pins 1.3 Applications n n n n n GPS Satellite radio Low-noise amplifiers for microwave communications systems WLAN and CDMA applications Analog / digital cordless applications BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; f = 1575 MHz; ZS = ZL = 50 Ω (input and output matched to 50 Ω) unless otherwise specified. Symbol Parameter Conditions Min Typ VCC supply voltage RF input AC coupled ICC(tot) total supply current configurable with external resistor [1] Tamb ambient temperature Tsp ≤ 103 °C [2] Max Unit 2.2 - 2.85 V 3 - 15 mA −40 +25 +85 °C - - 70 mW Ptot total power dissipation |s21|2 Insertion power gain - 18.3 - dB NF noise figure - 0.80 - dB Pi(1dB) input power at 1 dB gain compression - −20.1 - dBm IP3I input third-order intercept point - −0.2 - dBm jammers at f1 = f + 138 MHz and f2 = f + 276 MHz [1] ICC(tot) = ICC + IRF_OUT + IR_BIAS. [2] Tsp is the temperature at the solder point of the ground lead. 2. Pinning information Table 2. Pinning Pin Description 1 R_BIAS 2 RF_IN 3 GND 4 RF_OUT 5 ENABLE 6 Simplified outline 1 2 Graphic symbol 3 5 6 2 4 1 6 5 4 bottom view VCC 3 sym128 3. Ordering information Table 3. Ordering information Type number BGU7003 Package Name Description Version XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code BGU7003 B3 BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 2 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage RF input AC coupled - 3.0 V ICC(tot) total supply current configurable with external resistor - 25 mA Ptot total power dissipation Tsp ≤ 103 °C - 70 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] [1] Tsp is the temperature at the solder point of the ground lead. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 235 K/W 7. Characteristics Table 7. Characteristics Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions supply voltage VCC ICC(tot) RF input AC coupled total supply current Tamb ambient temperature |s21|2 insertion power gain configurable with external resistor [1] VENABLE ≤ 0.4 V [1] Min Typ Max Unit 2.2 - 2.85 V 3 - 15 mA - - 0.001 mA −40 +25 +85 °C Tamb = 25 °C f = 1.575 GHz 16.0 17.5 - dB f = 2.4 GHz [2] 14.0 15.2 - dB f = 5.8 GHz [2] 10.0 11.4 - dB f = 1.575 GHz [2] 15.0 17.5 - dB f = 2.4 GHz [2] 13.0 15.2 - dB f = 5.8 GHz [2] 9.0 11.4 - dB f = 1.575 GHz - 20.5 - dB f = 2.4 GHz - 17.8 - dB f = 5.8 GHz - 15.4 - dB f = 1.575 GHz - 0.70 - dB f = 2.4 GHz - 0.80 - dB f = 5.8 GHz - 1.5 dB −40 °C ≤ Tamb ≤ 85 °C MSG NFmin maximum stable gain minimum noise figure [1] ICC(tot) = ICC + IRF_OUT + IR_BIAS. [2] Guaranteed by design and characterization. BGU7003_1 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 3 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC Table 8. ENABLE (pin 5) −40 °C ≤ Tamb ≤ +85 °C VENABLE (V) State ≤ 0.4 OFF ≥ 0.7 ON 001aaj652 30 ICC(tot) (mA) (3) 20 (2) 10 (1) 0 0 1000 2000 3000 4000 5000 6000 7000 Rbias (Ω) Tamb = 25 °C. (1) VCC = 2.2 V (2) VCC = 2.5 V (3) VCC = 2.85 V Fig 1. Total supply current as a function of bias resistor; typical values BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 4 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 6 GHz 100 MHz −0.2 −135° −2 −0.5 −5 −45° −1 1.0 −90° 001aaj653 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 2. Input reflection coefficient (S11); typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 10 0° 0 100 MHz −0.2 −135° 6 GHz −5 −2 −0.5 −45° −1 −90° 1.0 001aaj654 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 3. Output reflection coefficient (S22); typical values BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 5 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 001aaj655 30 |s21|2 (dB) 001aaj657 0 |s12|2 (dB) 20 −20 10 −40 −60 0 0 2000 4000 6000 0 2000 4000 f (MHz) Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Insertion power gain (|s21|2) as a function of frequency; typical values Fig 4. Isolation (|s12|2) as a function of frequency; typical values Fig 5. 001aaj659 1 6000 f (MHz) 001aaj660 2.0 NFmin (dB) K 1.5 1.0 0.5 10−1 0 0 2000 4000 6000 0 f (MHz) 6000 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Rollet’s stability factor as a function of frequency; typical values Fig 7. Minimum noise figure as a function of frequency; typical values BGU7003_1 Product data sheet 4000 f (MHz) Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 6. 2000 © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 6 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 6 GHz +0.2 0.4 +5 100 MHz 180° 0 0.2 1 0.5 2 5 10 0° 0 −5 −0.2 −135° 0.2 −2 −0.5 −45° −1 1.0 −90° 001aaj661 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V. Fig 8. Optimum source reflection coefficient for minimum noise figure; typical values 001aaj662 0.3 rn(eq) 0.2 0.1 0 0 2000 4000 6000 f (MHz) Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V. Normalized to 50 Ω. Fig 9. Equivalent noise resistance as a function of frequency; typical values 8. Application information GPS LNA Other applications available. Please contact your local sales representative for more information. Application note(s) available on the NXP website. BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 7 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 8.1 Application circuit In Figure 10 the application diagram as supplied on the evaluation board is given. X3 Vcc Rb Ven GND C3 R3 1 RF in L1 C1 2 X1 R1 6 BGU7003 L3 4 L4 C2 RF out X2 5 L2 3 001aaj663 Fig 10. Circuit diagram of the evaluation board Table 9. List of components For circuit, see Figure 10. Component Description C1, C2 capacitor Value Supplier name/type Remarks 100 pF [1] MurataGRM1555 DC blocking MurataGRM1555 decoupling C3 capacitor 180 pF [1] L1 inductor 2.7 nH [1] Murata/LQW15A high quality input matching factor, low series resistance L2 inductor 33 nH [1] Murata/LQW15A high quality input matching factor, low series resistance L3 inductor 3.9 nH [1] Murata/LQG15HS output matching / DC shunt L4 inductor 4.7 nH [1] Murata/LQG15HS output matching R1 resistor 180 Ω [1] R2 resistor 0Ω [1] bridge R3 resistor 3300 Ω [1] bias setting X1, X2 SMA RF connector - Johnson, end launch SMA 142-0701-841 RF input / RF output X3 DC header Molex, PCB header, right angle, 1 row, 4 way 90121-0764 bias connector [1] - all capacitors, inductors and resistors have 0402 footprint. BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 8 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 8.2 Application board layout Figure 11 shows the board layout with component identifications. X1 RF in L1 L2 C1 BGU7003_v2.0 Application board GND JJ 02/2008 FR4 H = 0.2 Er = 4.6 Semiconductors Rb R3 BGU7003 Vcc R2 L3 R1 L4 Ven C3 C2 GND RF out X3 X2 001aaj664 Fig 11. Printed-Circuit Board (PCB) of the BGU7003 evaluation board 8.3 Printed-Circuit Board The material that has been used for the evaluation board is FR4 using the stack shown in Figure 12. 35 µm Cu 0.2 mm FR4 critical 35 µm Cu 0.8 mm FR4 only for mechanical rigidity of PCB 35 µm Cu 001aaj688 Material supplier is ISOLA DURAVER; εr = 4.6 to 4.9; tan δ = 0.02. Fig 12. Stack of the PCB material BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 9 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 8.4 GPS evaluation board Table 10. GPS application characteristics Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) unless otherwise specified. Symbol Parameter |s21|2 |s11|2 Conditions Min Typ Max Unit Insertion power gain - 18.3 - dB input return loss - −5.4 - dB |s22|2 output return loss - −19.5 - dB |s12|2 isolation - −24.6 - dB NF noise figure - 0.80 - dB Pi(1dB) input power at 1 dB gain compression - −20.1 - dBm PL(1dB) output power at 1 dB gain compression - −2.8 - dBm IP3I input third-order intercept point jammers at f1 = f + 138 MHz and f2 = f + 276 MHz - −0.2 - dBm f1 = f + 5 MHz; f2 = f + 10 MHz - −5.2 - dBm 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 500 MHz 180° 0 0.2 1 0.5 5 3 GHz −0.2 −135° 2 0° −45° −1 −90° 0 −5 −2 −0.5 10 0.2 1.0 001aaj665 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 13. Input reflection coefficient (S11); typical values BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 10 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 500 MHz 180° 0 0.2 1 0.5 2 5 0.2 10 0° 0 −5 −0.2 3 GHz −135° −2 −0.5 −45° −1 1.0 −90° 001aaj666 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 14. Output reflection coefficient (S22); typical values 001aaj667 0 001aaj668 0 |2 |s11 (dB) |s22|2 (dB) −2 −10 −4 −6 −20 −8 −10 −30 0 500 1000 1500 2000 2500 3000 3500 f (MHz) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 15. Input return loss (|s11|2) as a function of frequency; typical values 0 1000 1500 2000 2500 3000 3500 f (MHz) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 16. Output return loss (|s22|2) as a function of frequency; typical values BGU7003_1 Product data sheet 500 © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 11 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 001aaj669 30 |S21|2 (dB) 001aaj702 0 |S12|2 (dB) 20 −20 10 −40 −60 0 0 500 1000 1500 2000 2500 3000 3500 f (MHz) 0 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 17. Insertion power gain (|s21|2) as a function of frequency; typical values 001aaj671 40 IP3I = −0.2 dBm P (dB) 0 500 1000 2500 3000 3500 f (MHz) Fig 18. Reverse Isolation (|s12|2) as a function of frequency; typical values 001aaj672 40 IP3I = −5.2 dBm 0 −40 2000 Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). P (dB) PL 1500 PL −40 IMD3 IMD3 −80 −80 −120 −40 −30 −20 −10 0 10 Pdrive (dBm) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; f1 = f + 138 MHz; f2 = f + 276 MHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) Fig 19. Load power and third order intermodulation distortion as function of drive power; typical values −120 −40 −20 −10 0 Pdrive (dBm) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; f1 = f + 5 MHz; f2 = f + 10 MHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω) Fig 20. Load power and third order intermodulation distortion as function of drive power; typical values BGU7003_1 Product data sheet −30 © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 12 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 001aaj673 22 001aaj674 25 2 Gp (dB) Gp (dB) NF (dB) 20 1.5 Gp 18 15 1 NF 14 10 10 −35 −31 −27 −23 −19 −15 Pdrive (dBm) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; f = 1.575 GHz; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 21. Power gain as a function of drive power; typical values 0.5 5 1475 1575 0 1675 1625 f (MHz) Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output matched to 50 Ω). Fig 22. Power gain and noise figure as function of frequency; typical values BGU7003_1 Product data sheet 1525 © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 13 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 9. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 4× (1) L L1 e 6 5 e1 4 e1 6× A (1) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 SOT891 Fig 23. Package outline SOT891 (XSON6) BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 14 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 10. Soldering 1.05 0.5 (6×) 1.4 0.6 (6×) solder resist solder land plus solder paste 0.7 occupied area Dimensions in mm 0.15 (6×) 0.25 (6×) 0.35 sot891_fr Reflow soldering is the only recommended soldering method. Fig 24. Reflow soldering footprint 11. Abbreviations Table 11. Abbreviations Acronym Description AC Alternating Current CDMA Code Division Multiple Access DC Direct Current FR4 Flame Retardant 4 GPS Global Positioning System LNA Low-Noise Amplifier MMIC Monolithic Microwave Integrated Circuit RF Radio Frequency SiGe:C Silicon Germanium Carbon SMA SubMiniature version A WLAN Wireless Local Area Network 12. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU7003_1 20090302 Product data sheet - - BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 15 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGU7003_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 2 March 2009 16 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information GPS LNA . . . . . . . . . . 7 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 8 Application board layout . . . . . . . . . . . . . . . . . . 9 Printed-Circuit Board . . . . . . . . . . . . . . . . . . . . 9 GPS evaluation board. . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 March 2009 Document identifier: BGU7003_1