PJ6676 25V N-Channel Enhancement Mode MOSFET SOIC-08 FEATURES • RDS(ON), VGS@10V,IDS@15A=8mΩ • RDS(ON), [email protected],IDS@13A=12mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: SOIC-08 Package • Terminals : Solderable per MIL-STD-750D,Method 1036.3 • Marking : 6676 PIN Assignment 8 7 6 5 1 2 3 4 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 25 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 15 A ID M 50 A PD 2 .5 1 .5 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH E AS 400 Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 50 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ O C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.19.2006 PAGE . 1 PJ6676 ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 25 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=13A - 9 .6 1 2 .0 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=15A - 6.0 8.0 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=25V, VGS=0V - - 1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 5 A 30 - - S V D S = 1 5 V , ID = 1 5 A , V G S = 5 V - 39 - - 74 - - 8 .3 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 1 4 .2 - Tu r n - O n D e l a y Ti m e T d ( o n) - 17.2 21 - 15 17 - 78 90 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 30 42 In p u t C a p a c i t a n c e C iss - 3750 - O ut p ut C a p a c i t a nc e C oss - 650 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 500 - V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 2 .5 A V SD IS = 2 . 5 A , V G S = 0 V - 0 .7 3 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUL.19.2006 PAGE . 2 PJ6676 O 60 60 V GS= 4.5V, 5.0V, 6.0V, 10.0V 50 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 4.0V 40 3.5V 30 20 3.0V 10 2.5V V DS=10V 50 40 30 T J=25 OC 20 T J=125 OC 10 T J=-55 OC 0 0 0 1 2 3 4 1.5 5 3 3.5 4 4.5 FIG.2- Transfer Characteristic 30 16 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 12 V GS=4.5V 8 V GS=10V 4 ID =15A 25 20 15 T J=125 OC 10 5 T J=25 OC 0 0 0 10 20 30 40 50 2 60 ID - Drain Current (A) FIG.3- On Resistance vs Drain Current 4 6 8 VGS - Gate-to-Source Voltage (V) 5000 V GS=10V I D=15A 1.5 1.3 1.1 0.9 10 FIG.4- On Resistance vs Gate to Source Voltage C - Capacitance (pF) RDS(ON) - On-Resistance (Normalized) 2.5 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) 1.7 2 V GS=0V f=1MH Z 4000 Ciss 3000 2000 Coss 1000 Crss 0 0.7 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Tem perature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUL.19.2006 0 5 10 15 20 25 V DS - Drain-to-Source Voltage (V) FIG.6- Capacitance PAGE . 3 VGS - Gate-to-Source Voltage (V) PJ6676 Vgs Qg Qsw Vgs(th) 10 V DS=15V I D=15A 8 6 4 2 0 Qg(th) 0 Qgs I D=250uA 1.2 1.1 1 0.9 0.8 0.7 40 50 60 70 80 32 I D=250uA 31 30 29 28 27 -25 0 25 50 75 100 125 150 TJ - Junction Tem perature (oC) -50 -25 0 25 50 75 100 125 150 o ( TJ - Junction Temperature C) Fig.9 - Threshold Voltage vs Temperature IS - Source Current (A) 30 Fig.8 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.3 100 20 Qg - Gate Charge (nC) Fig.7 - Gate Charge Waveform 0.6 -50 10 Qg Qgd Fig.10 - Breakdown Voltage vs Junction Temperature V GS=0V 10 T J=125 OC 1 0.1 T J=25 OC T J=-55 OC 0.01 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage STAD-JUL.19.2006 PAGE . 4 PJ6676 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.19.2006 PAGE . 5