2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : S72 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e VD S 60 V G a t e - S o ur c e Vo l t a g e VGS +20 V ID 250 mA ID M 1300 mA PD 350 210 mW TJ , TS T G -5 5 to + 1 5 0 RθJ A 357 C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Juncti on-to Ambi ent Thermal Resi stance(PC B mounted)2 TA = 2 5 C TA = 7 5 O C O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUL.26.2007 PAGE . 1 2N7002 ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 1 0 u A 60 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 2 .5 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, I D=75mA - - 7 .5 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, I D=500mA - - 5 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=60V, VGS=0V - - 1 uA Gate Body Leakage IG S S V G S =+ 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 m A 200 - - mS - 0 .6 0 .7 - 0 .1 - - 0 .0 8 - - 9 15 - 21 26 - - 50 - - 25 - - 5 S ta ti c Ω Dynamic To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd Tu r n - O n D e l a y Ti m e ton Tu r n - O f f D e l a y Ti m e t o ff In p u t C a p a c i t a n c e C iss O ut p ut C a p a c i t a nc e C oss R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss V D S = 1 5 V , ID = 5 0 0 m A VDD=4.5V VDD=10V , RL=20Ω ID=500mA , VGEN=10V RG=10Ω nC ns V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 250 mA V SD IS = 2 5 0 m A , V G S = 0 V - 0 .9 3 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUL.26.2007 PAGE . 2 2N7002 O 1.2 5.0V V GS = 10V ~ 6.0V ID - Drain-to-Source Current (A) I D - Drain Source Current (A) Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1 4.0V 0.8 0.6 0.4 3.0V 0.2 0 0 1 2 3 4 1.2 V DS=10V 1 0.8 0.6 0.4 T J=25 OC 0.2 0 5 0 1 VDS - Drain-to-Source Voltage (V) 10 R DS(ON) - On-Resistance ( W ) R DS(ON) - On-Resistance ( W ) 4 3 V GS=4.5V 2 V GS=10V 1 0 5 6 I D=500mA 8 6 T J=125 OC 4 2 T J=25 OC 0 0 0.2 0.4 0.6 0.8 1 1.2 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) FIG.3- On Resistance vs Drain Current RDS(ON) - On-Resistance(Normalized) 4 FIG.2- Transfer Characteristic 5 1.8 3 VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 2 2 FIG.4- On Resistance vs Gate to Source Voltage V GS=10V I D=500mA 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUL.26.2007 PAGE . 3 2N7002 V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) V DS=15V I D=500mA 8 6 4 2 0 0 Qg(th) Qgs Qg Qgd I D=250uA 1.1 1 0.9 0.8 0.7 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) IS - Source Current (A) 0.8 1 73 72 I D=250uA 71 70 69 68 67 66 65 64 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (o C) Fig.8 - Threshold Voltage vs Temperature 10 0.6 Fig.7 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) 1.2 0.4 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 0.6 -50 0.2 Fig.9 - Breakdown Voltage vs Junction Temperature V GS=0V 1 T J=25 OC T J=125 OC 0.1 T J=-55 OC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage STAD-JUL.26.2007 PAGE . 4 2N7002 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUL.26.2007 PAGE . 5