STFV4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220FH Very High Voltage PowerMESH™ MOSFET Figure 1: Package Table 1: General Features TYPE STFV4N150 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 1500 V <7Ω 4A 40 W TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING FULLY PLASTIC TO-220 PACKAGE CREEPAGE DISTANCE PATH IS > 4mm DESCRIPTION Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications. TO-220FH Figure 2: Internal Schematic Diagram APPLICATIONS ■ SWITCH MODE POWER SUPPLIES Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STFV4N150 FV4N150 TO-220FH TUBE Rev. 1 July 2005 1/10 STFV4N150 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 1500 V Drain-gate Voltage (RGS = 20 kΩ) 1500 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4 A ID Drain Current (continuous) at TC = 100°C 2.5 A Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C 40 W 0.32 W/°C -55 to 150 °C IDM () PTOT Derating Factor Tj Tstg Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 3.12 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Max Value Unit 4 A 350 mJ Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating,TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 2 A V(BR)DSS 2/10 Min. Typ. Max. 1500 3 Unit V 10 500 µA µA ± 100 nA 4 5 V 5 7 Ω STFV4N150 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VDS = 30 V , ID = 2 A Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance td(on) tr td(off) tf Qg Qgs Qgd Min. Typ. Max. Unit 3.5 S VDS = 25 V, f = 1 MHz, VGS = 0 1300 120 12 pF pF pF Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 750 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) 35 30 45 45 ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 20) 30 10 9 50 nC nC nC Typ. Max. Unit 4 12 A A 2 V Table 8: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100 A/µs VDD = 45V (see Figure 18) 510 3 12 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100 A/µs VDD = 45V, Tj = 150°C (see Figure 18) 650 4 12.6 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/10 STFV4N150 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STFV4N150 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized BVdss vs Temperature 5/10 STFV4N150 Figure 15: Maximum Avalanche Energy vs Temperature 6/10 STFV4N150 Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Waveform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/10 STFV4N150 TO-220FH (Fully plastic High voltage) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.3 1.8 0.051 0.070 F2 1.3 1.8 0.051 0.070 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 16 L3 28.6 30.6 1.126 L4 9.8 10.6 0.385 L5 0.409 0.630 3.4 1.204 0.417 0.134 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 L8 14.5 15 0.570 L9 2.4 0.590 0.094 P011W 8/10 STFV4N150 Table 9: Revision History Date Revision 07-Jul-2005 1 Description of Changes First release. 9/10 STFV4N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10