STMICROELECTRONICS STP60NF10

STB60NF10
STP60NF10
N-CHANNEL 100V - 0.019 Ω - 80A D²PAK/TO-220
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
STB60NF10
STP60NF10
■
■
■
■
Figure 1:Package
VDSS
RDS(on)
ID
100 V
100 V
< 0.023 Ω
< 0.023 Ω
80 A
80 A
TYPICAL RDS(on) = 0.019 Ω
EXTREMELY HIGHL dv/dt CAPABILITY
100% AVALANCHE TESTED
SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance
and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
3
1
D2PAK
TO-263
(Suffix “T4”)
3
1
2
TO-220
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH EFFICIENCY DC/DC CONVERTERS,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
■ MOTOR CONTROL
Table 2: Ordering Information
SALES TYPE
STB60NF10T4
STP60NF10
MARKING
B60NF10
P60NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID(*)
ID
IDM(•)
Ptot
dv/dt (1)
EAS (2)
Tstg
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
May 2005
Value
100
100
± 20
80
66
320
300
2
16
485
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Rev. 2.0
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STB60NF10 STP60NF10
Table 4: THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
°C/W
°C/W
°C
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Table 5: OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
V(BR)DSS
Min.
Typ.
Max.
100
Unit
V
1
10
µA
µA
±100
nA
Table 6: ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 40 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.019
0.023
Ω
Typ.
Max.
Unit
Table 7: DYNAMIC
Symbol
2/10
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 25 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
ID = 40 A
Min.
78
S
4270
470
140
pF
pF
pF
STB60NF10 STP60NF10
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 40 A
VGS = 10 V
RG = 4.7 Ω
(Resistive Load, Figure )
17
56
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 50V ID= 80A VGS= 10V
104
20
32
nC
nC
nC
Table 9: SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
Typ.
VDD = 50 V
ID = 40 A
VGS = 10 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
Max.
82
23
Unit
ns
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 80 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A
di/dt = 100A/µs
Tj = 150°C
VDD = 50 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
92
340
7.4
Max.
Unit
80
320
A
A
1.3
V
ns
µC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
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STB60NF10 STP60NF10
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
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STB60NF10 STP60NF10
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 13: Source-drain Diode Forward Characteristics
Figure 12: Normalized on Resistance vs Temperature
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
.
.
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STB60NF10 STP60NF10
Figure 15: Unclamped Inductive Load Test Circuit
Figure 16: Unclamped Inductive Waveform
Figure 17: Switching Times Test Circuits For Resis-
Figure 18: Gate Charge test Circuit
tive Load
Figure 19: Test Circuit For Inductive Load Switch-
ing And Diode Recovery Times
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STB60NF10 STP60NF10
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
A
4.4
4.6
0.173
TYP.
0.181
TYP.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.394
8.5
0.409
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
R
V2
0.4
0°
0.126
0.015
8°
0°
8°
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STB60NF10 STP60NF10
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
MAX.
MIN.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
TYP.
TYP.
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
L3
8/10
TYP.
inch.
0.645
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
STB60NF10 STP60NF10
Table 11:Revision History
Date
Revision
Description of Changes
May 2005
1.0
FIRST ISSUE
May 2005
2.0
ADDED PACKAGE D²PAK
9/10
STB60NF10 STP60NF10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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