ST 2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low VCE(sat) ․Excellent current gain characteristics TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V 3 A(DC) 5 A(Pulse)* Ptot 300 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current IC Power Dissipation C C *Notes: Single pulse Pw=10ms SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/04/2003 ST 2SC4115 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group Q R hFE 120 - 270 hFE 180 - 390 S hFE 270 - 560 V(BR)CBO 40 - - V V(BR)CEO 20 - - V V(BR)EBO 6 - - V ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - 0.2 0.5 V fT - 290 - MHz COB - 25 - pF DC Current Gain at VCE=2V, IC=100mA Collector Base Breakdown voltage at IC =50 μA Collector Emitter Breakdown Voltage at IC =1mA Emitter Base Breakdown Voltage at IE =50 μA Collector Cutoff Current at VCB=30V Collector Cutoff Current at VEB=5V Collector Emitter Saturation Voltage* at IC=2A, IB=100mA Transition Frequency at VCE=2V, IE=-500mA, f=100MHz Collector Output Capacitance at VCE=10V, f=1MHz *Note: Measured using pulse current. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/04/2003 ST 2SC4115 GROUNDED EMITTER OUTPUT CHARACTERISTICS (1) Grounded emitter propagation characteristics GROUNDED EMITTER OUTPUT CHARACTERISTICS (2) 10 COLLECTOR CURRENT, A COLLECTOR CURRENT, A 2 1 0.5 Ta=100 C 0.2 0.1 16mA 2 VCE=2V 25 C -40 C 0.05 0.02 0.01 5m 1.6 0 0.4 0.8 1.2 5 Ta=25 C 10mA 8mA 6mA 1.2 4mA 0.8 2mA 0.4 I B =0A 0 0 2m 1m 14mA 12mA 18mA 20mA COLLECTOR CURRENT, A 5 0.2 0.4 0.6 0.8 1.0 40mA 35mA Ta=25 C 30mA 25mA 4 20mA 15mA 3 10mA 2 5mA 1 I B =0A 0 0 COLLECTOR EMITTER VOLTAGE, V 1.4 45mA 50mA 1 3 2 4 5 COLLECTOR EMITTER VOLTAGE, V Base emiter voltage,V COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (1) 1 VCE=2V COLLECTOR SATURATION VOLTAGE, V Ta=100 C 2000 25 C 1000 -40 C 500 200 100 50 20 5 25 C 0.2 -40 C 50m 20m 10m 5m 2m 1m 1m 2m 5m 0.01 10 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT, A COLLECTOR CURRENT, A COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (3) GAIN BANDWIDTH PRODUCT 1 0.5 5 Ta=100 C 25 C 0.2 -40 C 0.1 50m 20m 10m 5m 2m 1m 1m 2m 10m 20m 0.1 0.2 1 2 COLLECTOR CURRENT, A 10 0.2 200 100 20 10 2 1 -100 -200 EMITTER CURRENT, mA -40 C 0.1 0.05 0.02 0.01 5m 2m 1000 -10 -20 Ta=100 C 25 C 0.05 0.1 0.2 0.5 1 2 10 5 COLLECTOR CURRENT, A Ta=25 C VCE=2V -1 -2 I C/I B =20 1m 1m 2m 5m 0.01 10 1000 I C/I B =20 0.5 VS.EMITTER CURRENT TRANSITION FREQUENCY, MHz COLLECTOR SATURATION VOLTAGE, V 0.05 0.1 0.2 0.5 1 2 Ta=100 C 0.1 10 5 1m 2m 5m 0.01 1 I C/I B =10 0.5 Collector output capacitance,pF Emitte input capacitance,pF DC CURRENT GAIN , hFE 5000 COLLECTOR EMITTER SATURATION VOLTAGE vs. COLLECTOR CURRENT (2) COLLECTOR SATURATION VOLTAGE, V DC CURRENT GAIN VS. COLLECTOR CURRENT -1000 Collector output capacitance vs.collector base voltage Emitter input capacitance vs. emitter base voltage Ta=25 C f=1MHz Cob 200 100 Cob 20 10 0.1 0.2 1 2 10 20 Collector base voltage, v Emitter base voltage, v SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/04/2003 50