SEMTECH_ELEC ST2SC4115

ST 2SC4115
NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups, Q, R
and S, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
․Low VCE(sat)
․Excellent current gain characteristics
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
20
V
Emitter Base Voltage
VEBO
6
V
3
A(DC)
5
A(Pulse)*
Ptot
300
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Collector Current
IC
Power Dissipation
C
C
*Notes: Single pulse Pw=10ms
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/04/2003
ST 2SC4115
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
Current Gain Group Q
R
hFE
120
-
270
hFE
180
-
390
S
hFE
270
-
560
V(BR)CBO
40
-
-
V
V(BR)CEO
20
-
-
V
V(BR)EBO
6
-
-
V
ICBO
-
-
0.1
μA
IEBO
-
-
0.1
μA
VCE(sat)
-
0.2
0.5
V
fT
-
290
-
MHz
COB
-
25
-
pF
DC Current Gain
at VCE=2V, IC=100mA
Collector Base Breakdown voltage
at IC =50 μA
Collector Emitter Breakdown Voltage
at IC =1mA
Emitter Base Breakdown Voltage
at IE =50 μA
Collector Cutoff Current
at VCB=30V
Collector Cutoff Current
at VEB=5V
Collector Emitter Saturation Voltage*
at IC=2A, IB=100mA
Transition Frequency
at VCE=2V, IE=-500mA, f=100MHz
Collector Output Capacitance
at VCE=10V, f=1MHz
*Note: Measured using pulse current.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/04/2003
ST 2SC4115
GROUNDED EMITTER OUTPUT
CHARACTERISTICS (1)
Grounded emitter
propagation characteristics
GROUNDED EMITTER OUTPUT
CHARACTERISTICS (2)
10
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
2
1
0.5
Ta=100 C
0.2
0.1
16mA
2
VCE=2V
25 C
-40 C
0.05
0.02
0.01
5m
1.6
0
0.4
0.8
1.2
5
Ta=25 C
10mA
8mA
6mA
1.2
4mA
0.8
2mA
0.4
I B =0A
0
0
2m
1m
14mA
12mA
18mA
20mA
COLLECTOR CURRENT, A
5
0.2
0.4
0.6
0.8
1.0
40mA
35mA Ta=25 C
30mA
25mA
4
20mA
15mA
3
10mA
2
5mA
1
I B =0A
0
0
COLLECTOR EMITTER VOLTAGE, V
1.4
45mA
50mA
1
3
2
4
5
COLLECTOR EMITTER VOLTAGE, V
Base emiter voltage,V
COLLECTOR EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT (1)
1
VCE=2V
COLLECTOR SATURATION
VOLTAGE, V
Ta=100 C
2000
25 C
1000
-40 C
500
200
100
50
20
5
25 C
0.2
-40 C
50m
20m
10m
5m
2m
1m
1m 2m 5m 0.01
10
0.05 0.1 0.2 0.5 1 2
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
COLLECTOR EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT (3)
GAIN BANDWIDTH PRODUCT
1
0.5
5
Ta=100 C
25 C
0.2
-40 C
0.1
50m
20m
10m
5m
2m
1m
1m 2m
10m 20m
0.1 0.2
1 2
COLLECTOR CURRENT, A
10
0.2
200
100
20
10
2
1
-100 -200
EMITTER CURRENT, mA
-40 C
0.1
0.05
0.02
0.01
5m
2m
1000
-10 -20
Ta=100 C
25 C
0.05 0.1 0.2 0.5 1 2
10
5
COLLECTOR CURRENT, A
Ta=25 C
VCE=2V
-1 -2
I C/I B =20
1m
1m 2m 5m 0.01
10
1000
I C/I B =20
0.5
VS.EMITTER CURRENT
TRANSITION FREQUENCY, MHz
COLLECTOR SATURATION
VOLTAGE, V
0.05 0.1 0.2 0.5 1 2
Ta=100 C
0.1
10
5
1m 2m 5m 0.01
1
I C/I B =10
0.5
Collector output capacitance,pF
Emitte input capacitance,pF
DC CURRENT GAIN , hFE
5000
COLLECTOR EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT (2)
COLLECTOR SATURATION
VOLTAGE, V
DC CURRENT GAIN VS.
COLLECTOR CURRENT
-1000
Collector output capacitance
vs.collector base voltage
Emitter input capacitance vs.
emitter base voltage
Ta=25 C
f=1MHz
Cob
200
100
Cob
20
10
0.1 0.2
1
2
10 20
Collector base voltage, v
Emitter base voltage, v
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/04/2003
50