ST 2SA1271 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit Collector Base Voltage -VCBO 35 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Emitter Current IE 800 mA Ptot 600 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SA1271 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit Current Gain Group O hFE 100 - 200 - Y hFE 160 - 320 - hFE 35 - - - -ICBO - - 0.1 μA -IEBO - - 0.1 μA -VCE(sat) - - 0.7 V fT - 120 - MHz -VBE 0.5 - 0.8 V COB - 19 - pF -VCEO 30 - - V DC Current Gain at -VCE=1V, -IC=100mA at -VCE=1V, -IC=700mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Collector Emitter Saturation Voltage at -IC=500mA, -IB=20mA Transition Frequency at -VCE=5V, -IC=10mA Base Emitter Voltage at -IC=10mA, -VCE=1V Collector Output Capacitance at -VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at -IC=10mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002