ST 2SC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25OC) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1623 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 90 - 180 - O hFE 135 - 270 - Y hFE 200 - 400 - G hFE 300 - 600 - V(BR)CBO 60 - - V V(BR)CEO 50 - - V V(BR)EBO 5 - - V ICBO - - 0.1 μA IEBO - - 0.1 μA VCE(sat) - 0.15 0.3 V VBE(sat) - 0.86 1 V fT - 250 - MHz COB - 3 - pF DC Current Gain at VCE=6V, IC=1mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002