ST 2SC458 NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three group, B, C and D according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25℃) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Emitter Current IE -100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 C ST 2SC458 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit B hFE 100 - 200 - C hFE 160 - 320 - D hFE 250 - 500 - ICBO - - 0.5 μA IEBO - - 0.5 μA VCE(sat) - - 0.2 V fT - 230 - MHz VBE - 0.67 0.75 V COB - 1.8 3.5 pF VCBO 30 - - V VCEO 30 - - V VEBO 5 - - V NF - 4 10 dB hie - 16.5 - kΩ hie - 70 - X10 hie - 130 - - hie - 11 - μS DC Current Gain at VCE=12V, IC=2mA Current Gain Group Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=12V, IC=2mA Base Emitter Voltage at IC=2mA, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IC=10μA Noise Figure at VCE=6V, IC=0.1mA, f=1kHz, Rg=500Ω Small signal input impedance at VCE=5V, IC=0.1mA,f=270Hz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/12/2002 -6