BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949588 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-64 • Rectification, general purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW82 VR = 200 V; IFAV = 3 A SOD-64 BYW83 VR = 400 V; IFAV = 3 A SOD-64 BYW84 VR = 600 V; IFAV = 3 A SOD-64 BYW85 VR = 800 V; IFAV = 3 A SOD-64 BYW86 VR = 1000 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYW82 VR = VRRM 200 V BYW83 VR = VRRM 400 V BYW84 VR = VRRM 600 V BYW85 VR = VRRM 800 V BYW86 VR = VRRM 1000 V IFSM 100 A Repetitive peak forward current IFRM 18 A Average forward current IFAV 3 A tp = 20 μs, half sine wave, Tj = 175 °C PR 1000 W I(BR)R = 1 A, Tj = 175 °C ER 20 mJ i2t 40 A2s Tj = Tstg - 55 to + 175 °C Reverse voltage = repetitive peak reverse voltage Peak forward surge current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) See electrical characteristics tp = 10 ms, half sine wave i2t-rating Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient Document Number: 86051 Rev. 1.7, 25-Aug-10 TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 161 BYW82, BYW83, BYW84, BYW85, BYW86 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX IF = 3 A VF - - 1 V VR = VRRM IR - 0.1 1 μA μA Forward voltage Reverse current UNIT VR = VRRM, Tj = 100 °C IR - 5 10 Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V Diode capacitance VR = 4 V, f = 1 MHz CD - 40 60 pF μs Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 3.5 5 IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - 4.5 7.5 μs lF = 1 A, dI/dt = 5 A/μs Qrr - 8 12 μC Reverse recovery charge TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 40 100 IF - Forward Current (A) 20 l l 10 0 5 10 15 20 25 0.01 0.001 Fig. 1 - Max. Thermal Resistance vs. Lead Length IFAV - Average Forward Current (A) Tj = 25 °C 0.1 30 I - Lead Length (mm) 94 9563 3.5 VR = VRRM half sinewave RthJA = 25 K/W I = 10 mm 3.0 2.5 2.0 1.5 1.0 RthJA = 70 K/W 0.5 PCB: d = 25 mm 0.0 0 20 40 0 Tamb - Ambient Temperature (°C) 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 16360 Fig. 3 - Forward Current vs. Forward Voltage 350 VR = VRRM 300 250 PR-Limit at 100 % VR 200 150 PR-Limit at 80 % VR 100 50 60 80 100 120 140 160 180 Fig. 2 - Max. Average Forward Current vs. Ambient Temperature www.vishay.com 162 Tj = 175 °C 1 TL = constant 0 16361 10 PR - Reverse Power Dissipation (mW) RthJA - Therm. Resist. Junction/Ambient (K/W) 30 0 25 16363 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86051 Rev. 1.7, 25-Aug-10 BYW82, BYW83, BYW84, BYW85, BYW86 Standard Avalanche Sinterglass Diode 1000 100 CD - Diode Capacitance (pF) IR - Reverse Current (A) VR = VRRM 100 10 f = 1 MHz 80 60 40 20 1 0 25 16362 50 75 100 125 150 175 0.1 16364 Tj - Junction Temperature (°C) Fig. 5 - Reverse Current vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) Vishay Semiconductors 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 V RRM = 1000 V 100 RthJA = 70 K/W tp/T = 0.5 Tamb = 25°C tp/T = 0.2 10 tp/T = 0.1 45 °C tp/T = 0.05 tp/T = 0.01 tp/T = 0.02 1 10 -4 70°C 60 °C 100°C 10 -3 10 -2 10 -1 10 0 10 1 10 -1 tp - Pulse Length (s) 94 9568 10 0 10 1 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86051 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 163 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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