BYW178 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Very fast reverse recovery time • Low reverse recovery peak current 949588 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA • Halogen-free according to IEC 61249-2-21 definition Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 • Ultra fast rectification diode for switching mode power supplies Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg PARTS TABLE PART BYW178 TYPE DIFFERENTIATION PACKAGE VR = 800 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT See electrical characteristics BYW178 VR = VRRM 800 V IFSM 80 A Repetitive peak forward current IFRM 15 A Average forward current IFAV 3 A Tj = Tstg - 55 to + 175 °C ER 20 mJ Reverse voltage = repetitive peak reverse voltage Peak forward surge current tp = 10 ms, half sine wave Junction and storage temperature range Non repetitive reverse I(BR)R = 0.4 A MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction lead Lead length l = 10 mm, TL = constant RthJL 25 K/W Junction ambient On PC board with spacing 37.5 mm RthJA 70 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery current Reverse recovery time Reverse recovery time (JEDEC) Document Number: 86047 Rev. 1.7, 04-Aug-10 TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 3 A VF - - 1.9 UNIT V VR = VRRM IR - - 1 μA VR = VRRM, Tj = 100 °C IR - - 20 μA IF = 1 A, dIF/dt ≤ - 50 A/μs, VBatt = 200 V lRM - 2.2 - A IF = 1 A, dIF/dt ≤ - 50 A/μs, VBatt = 200 V, iR = 0.25 x lRM trr - 50 - ns IF = 0.5 A, lR = 1 A, iR = 0.25 A trr - - 60 ns For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BYW178 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode RthJA - Therm.Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 40 IFAV –Average Forward Current( A ) 3.5 30 20 l l 10 TL = constant 0 0 5 10 15 20 25 I RM – Reverse Recovery Current (A ) 1.5 1.0 RthJA ≤ 70 K/W PCB: d = 25 mm 0.5 0.0 0 20 40 60 80 100 120 140 160 180 Tamb – Ambient Temperature (°C ) Fig. 4 - Max. Average Forward Current vs. Ambient Temperature 5 1000 V R = VRRM I R – Reverse Current (A ) dIF/dt = 50A/μs 4 3 2 1 100 10 1 94 9571 1 10 I F – Forward Current ( A ) Fig. 2 - Typ. Reverse Recovery Current vs. Forward Current 100.000 10.000 Tj = 175°C 1.000 T j = 25 °C 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 16458 V F – Forward Voltage ( V ) Fig. 3 - Forward Current vs. Forward Voltage www.vishay.com 2 25 16460 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Fig. 5 - Reverse Current vs. Junction Temperature PR – Reverse Power Dissipation ( mW) 0.1 – Forward Current (A) RthJA ≤ 25 K/W l = 10mm 2.0 0 F 2.5 16459 Fig. 1 - Typ. Thermal Resistance vs. Lead Length I VR = VRRM half sinewave 30 I - Lead Length (mm) 94 9570 3.0 400 V R = VRRM 350 300 PR–Limit @100 % VR 250 200 150 PR–Limit @ 80 % VR 100 50 0 25 16461 50 75 100 125 150 175 Tj – Junction Temperature (°C ) Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86047 Rev. 1.7, 04-Aug-10 BYW178 Ultra Fast Avalanche Sinterglass Diode Vishay Semiconductors CD – Diode Capacitance ( pF ) 90 f = 1 MHz 80 70 60 50 40 30 20 10 0 0.1 16462 1.0 10.0 V R – Reverse Voltage ( V ) 100.0 Zthp - Thermal Resist. for Pulse Cond. (K/W) Fig. 7 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 600 V RthJA = 70 K/W 100 Tamb = 25 °C tp/T = 0.5 100 °C 0.2 10 45 °C 0.1 70 °C 0.05 0.02 0.01 1 10-4 10-3 10-2 10-1 10-0 101 102 100 tp - Pulse Length (s) 949562 101 102 IFRM - Repetitive Peak Forward Current (A) Fig. 8 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86047 Rev. 1.7, 04-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1